关键词: 铜, CMP, 抛光速率, 影响因素

Abstract: Dependence of polishing rates of copper on concentrations of NH 3·H 2O, passivator K 3,γ_Al 2O 3 abrasives and polishing pressures, polishing rotative rates were studied. Dependent mechanisms were explained. It was shown a linear relation between polishing and polishing pressures and rotative rates within some range, non_linear relation between polishing and various reagent concentrations. Preston coefficient was varied. CMP recipe of the best polishing rate was gained: 4%K 3Fe(CN) 6+1%NH 3·H 2O+25%γ-Al 2O 3, K p=0.023 83. Technics conditions were 300 rpm and 80 kpa. The best polishing effect was R a=50 nm, R max =400 nm.