铜在氨水介质铁氰化钾CMP抛光液中抛光速率及其影响因素的研究
何捍卫, 胡岳华, 黄可龙
Polishing Rate and Dependent Factors of Copper in NH_3·H _2O Aqueous Solution Containing K _3Fe(CN)_6 during CMP
HE Han_wei , HU Yue_hua , HUANG Ke_long
电化学（中英文）
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2002, (2): 202
-206
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DOI: 10.61558/2993-074X.3289
