电化学沉积制备羟基磷灰石涂层及机理研究

电化学（中英文） ›› 2002, Vol. 8 ›› Issue (3): 288-294.

电化学沉积制备羟基磷灰石涂层及机理研究

胡皓冰,林昌健,陈菲,胡仁,郭明

厦门大学化学系,厦门大学化学系,厦门大学化学系,厦门大学化学系,厦门大学化学系材料系,固体表面物理化学国家重点实验室,福建厦门361005 ,材料系,固体表面物理化学国家重点实验室,福建厦门361005 ,材料系,固体表面物理化学国家重点实验室,福建厦门361005 ,材料系,固体表面

收稿日期:2002-08-28 修回日期:2002-08-28 出版日期:2002-08-28 发布日期:2002-08-28

Pure HAP Film Prepared by Direct Electrodepositing on Metallic Surface and Its Mechanism

HU Hao_bing,LIN Chang_jian, CHEN Fei, HU Ren, GUO Ming

(State Key Laboratory for Physical Chemistry of Solid Surfaces, Department of Chemistry, Department of Materials Science and Engineering, Xiamen University, Xiamen 361005,China

Received:2002-08-28 Revised:2002-08-28 Published:2002-08-28 Online:2002-08-28

摘要/Abstract

摘要： 控制电沉积溶液中钙 /磷离子的浓度 ,在钛合金表面直接沉积羟基磷灰石 (HAP)陶瓷涂层 .XRD、SEM实验证实 ,制备的HAP晶粒完整 ,粒度均匀 .热力学计算表明HAP比TCP更易于生成 .文中讨论了羟基磷灰石 (HAP)涂层电沉积的机理 ,指出电沉积是一个二步过程 ,HAP的形成是从溶液中离子到固体的直接过程 ,没有前驱体的生成

关键词: 羟基磷灰石, 电化学沉积, 涂层, 机理

Abstract: In controlling concentration of Ca 2+ and PO 4 3- in electrodeposition solution, the HAP film on Ti alloy has been deposited directly. Using XRD and SEM we have learned that prepared HAP is intact in crystal and equal in dimension. Thermodynamic calculation indicated that the HAP is easer formation of than that TCP of. With the XRD, SEM analyses and thermodynamic calculation, the electrodeposition mechanism has been discussed. It was proved that electrodepositon is a two_stage process and formation of HAP is a direct process from solution ions to HAP crystal without precursor.

Key words: Hydroxyapatite, Ceramic, Film, Mechanism

中图分类号:

TQ153

胡皓冰,林昌健,陈菲,胡仁,郭明. 电化学沉积制备羟基磷灰石涂层及机理研究[J]. 电化学（中英文）, 2002, 8(3): 288-294.

HU Hao_bing,LIN Chang_jian, CHEN Fei, HU Ren, GUO Ming . Pure HAP Film Prepared by Direct Electrodepositing on Metallic Surface and Its Mechanism[J]. Journal of Electrochemistry, 2002, 8(3): 288-294.

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https://electrochem.xmu.edu.cn/CN/Y2002/V8/I3/288

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