[1]Kern W.[J]J.Electrochem.Soc.,1990,137:1887.
[2]Bassous E.Transactions on Electron Devices[M].IEEE.1978.Vol.ED-25,1178.
[3]Zhang X G.Electrochemistry of Silicon and Its Oxide[M].Beijing:Chinese Chemical Industry Press,2004.
[4]Chazalvie J N.Etman l M,Ozanam F[J].J.Electro-anal.Chem.,1991,297:533.
[5]Chen LC,Chen M,Lien C et al.[J].J.Elechochem.Soc.,1995,.142:.170.
[6]Zhang X G,Collins S D,Smith R L.[M].J.Electro-chem.Soc.,1989,136:.1561.
[7]Memming R,Schwandt G.[J].Surf.Sci.1966,4:109.
[8]Chazalviel J N,Etman M,Ozanam F[J].J.Electro-anal.Chem.,1991,297:533.
[9]Palik E D,Glembocki O J,Heard I.[J].J.Electro-che.Soc.,1987,134:404.
[10]Willeke G,Kellermann K.[J].Semicond.Sci.Tech-nol.,1996:11:415.
[11]Myamoto M,Kita N,Ishida S,et al.[J].J.Electro-chem.Soc.,1994,141:2899.
[12]Ghandhi S K.[M].New York:in VLSI FabricationPrinciples,John Willey&Sons,1983.
[13]Kooij E S,Butter K,Kelly J J.[J].Electrochemicaland Solid State Letter,1999,2:178.
[14]Wijaranakula W.[J].J.Electrochem.Soc.,1994,141:.3273.
[15]Yang K H.[J].J.Electrochem.Soc.,1984,131:1140.
[16]Seidel H,Csepregi L,Heuberger A et al.[J].J.Electrochem.Soc.,1990,13:3612.
[17]Van den Meerakker J E A.Van den Straaten MHM.[J].J.Electrochem.Soc.,1990.137:1239.
[18]Seidel H,Csepregi L,Heuberger A,et al.[J].Ibid,Soc.,1990,137:3626.
[19]Palik E D,Faust J W,Gray Jr HF,et al.[J].Ibid.,1982,129:2052.
[20]Glembocki O J,Stahlbush E,Tomkiewicz M.[J].J.Electroche.Soc.,1985,132:145.
[21]Smith R L,Kloeck B,DeRooij N,et al.[J].J.Elec-troanalytical Chem.&Interfac.Electrochem.,1987,238:103.
[22]Bressers P M.M C,Pagano S A S P,Kelly J J.[J].J.Electronanal.Chem.,1995,391:159.
[23]Price J B.Semiconducotr Silicon[M].Eds.Huff HR,Burgess R R,Electrochem.Soc.:1973.339.
[24]Seidel H,Csepregi L,Heuberger A,et al.[J].J.Electrochem.Soc.,1990,137:3612.
[25]Calabrese G S,Wrighton M S.[J].J.Electrochem.Soc.,1981,128:1014.
[26]Sato K,Shikita M,Yamashiro T,et al.[J].Sensorsand Actuators,1999,73:131.
[27]Tellier C R,Brahim-Bounab A.[J].Journal of Mate-rials Science,1994,29:5953.
[28]Zhang Q,Liu L,Li Z.[J].Sensors and Actuators A,1996,56:.251.
[29]Hesketh P J,Ju C,Gowda S,et al.[J].Electrochem.Soc.,1993,140:1080.
[30]Gatos HC,Lavine MC.[M].Burgess:in Progress inSemicopnductors,Volume 9,eds.A.F.Gibon andR.E.,CRC Press,1965.
[31]Gorostiza P,Diaz R,Sanz F,et al.[J].J.Electro-chem.Soc.,1997,144:4119.
[32]Norga G J,Platero M,Black K A,et al.[J].J.Elec-trochem.Soc.,1997,144:2801.
[33]Kloeck B,Collins S D,Rooij N F,et al.Transactionson Electron Devices[M].IEEE,1989,36(4):663l.
[34]Chen LC,Chen M,Tsaur TH,et al.[J].Sen-sors and Actuators A,1995,49:115.
[35]Lehmann V,Stengl R,Luigart A.[J].Materials Sci-ence and Engineering,2000,69:11.
[36]Zhang X G[J].J.Electrochem.Soc.,1991,138:3750.
[37]Al Rifai M H,Christopherson M,Ottow S,et al.[J].Electrochem.Soc.,2000,147:627 |