金属的电化学微区刻蚀方法

电化学（中英文） ›› 2002, Vol. 8 ›› Issue (2): 139-147.

金属的电化学微区刻蚀方法

蒋利民,田中群,刘柱方,毛秉伟,黄海苟,孙建军

厦门大学化学系固体表面物理化学国家重点实验室,厦门大学化学系固体表面物理化学国家重点实验室,厦门大学化学系固体表面物理化学国家重点实验室,厦门大学化学系固体表面物理化学国家重点实验室,厦门大学化学系固体表面物理化学国家重点实验室,厦门大学化学系固体表面物理化学

收稿日期:2002-05-28 修回日期:2002-05-28 出版日期:2002-05-28 发布日期:2002-05-28

The Electrochemical Etching of Metals

JIANG Li_min,TIAN Zhong_qun *,LIU Zhu_fang, MAO Bin_wei,HUANG Hai_gou,SUN Jian_jun

(State Key Lab. for Phys. Chem. of Solid Surfaces and Chem. Dept., Xiamen Univ., Xiamen 361005, China

Received:2002-05-28 Revised:2002-05-28 Published:2002-05-28 Online:2002-05-28

摘要/Abstract

摘要： 本文概述了现行的金属微区刻蚀方法并详细地介绍几种电化学刻蚀方法 ,比较了掩膜法、扫描电化学显微镜法、约束刻蚀剂层法、电化学扫描隧道显微镜法和超短电位脉冲法各自的特点 .从加工精度 (能否进行微米和纳米级加工 )、加工效率 (工序复杂程度 ,能否批量制造或复制 )、可用范围 (主要是能否加工复杂三维立体结构 )等各项因素进行了综合分析 ,结果表明 ,各种加工方法各有其优缺点 ,从总的效果来看 ,约束刻蚀剂层技术在微加工方面具有较大优势

关键词: 金属, 刻蚀, 电化学刻蚀, 约束刻蚀剂层技术, 微加工

Abstract: All kinds of current methods for etching metals are reviewed.The electrochemical etching methods among them,including through_mask,scanning electrochemical microscopy,confined etchant layer technique,electrochemical scanning tunneling microscopy and super_short potential pulse,are discussed in detail.The compositive analyses were made for the methods in terms of the processing precision(whether processing in micrometer or nanometer scale),the processing efficiency(the complexity of the procedure,and whether fabricating in batch),the extent of application(mainly refer to the procedure,and whether fabricating in batch),the extent of results was shown that each method has itself advantage and imperfection. The confined etchant layer technique has superiority over other methods in the view of the total effect.

中图分类号:

TG174.4

蒋利民, 田中群, 刘柱方, 毛秉伟, 黄海苟, 孙建军. 金属的电化学微区刻蚀方法[J]. 电化学（中英文）, 2002, 8(2): 139-147.

JIANG Li_min, TIAN Zhong_qun , LIU Zhu_fang, MAO Bin_wei, HUANG Hai_gou, SUN Jian_jun . The Electrochemical Etching of Metals[J]. Journal of Electrochemistry, 2002, 8(2): 139-147.

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链接本文: https://electrochem.xmu.edu.cn/CN/

https://electrochem.xmu.edu.cn/CN/Y2002/V8/I2/139

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