多孔硅薄膜上铜微晶的形成

doi:10.61558/2993-074X.1907

电化学（中英文） ›› 2008, Vol. 14 ›› Issue (3): 284-287. doi: 10.61558/2993-074X.1907

多孔硅薄膜上铜微晶的形成

陈兰莉;周甫方;翟保改;黄远明;

南阳理工学院电子系;云南师范大学物理与电子信息技术学院;

收稿日期:2008-08-28 修回日期:2008-08-28 出版日期:2008-08-28 发布日期:2008-08-28

Formation of Copper Microcrystals on Porous Silicon Films

CHEN Lan-li1,ZHOU Fu-fang2,ZHAI Bao-gai2,HUANG Yuan-ming2

(1.Department of Electronics,Nanyang Institute of Technology,Nanyang 473004,Henan,China;2.College of Physics and Electronic Information,Yunnan Normal University,Kunming 650092,China

Received:2008-08-28 Revised:2008-08-28 Published:2008-08-28 Online:2008-08-28

摘要/Abstract

摘要： 以氯化铜水溶液作电解液,在发光多孔硅薄膜表面上电沉积铜.SEM观测和计算机图像处理结果表明:电沉积之后,在多孔硅薄膜上形成了一些或实心或中空的等边三角形铜微晶,沉积后的多孔硅薄膜的分形维数从2.608降为2.252,其表面由粗糙变为光滑.与物理方法制作相比,这是一种机械强度和导电性能都更加良好的多孔硅薄膜.

关键词: 电沉积, 多孔硅, 微晶, 纳米材料, 分形维数

Abstract: Microcrystals of metallic copper were electrochemically deposited onto the surface of porous silicon films in the aqueous electrolyte of copper(II) chloride.The microstructures of electrochemically deposited copper microcrystals on the porous silicon films were characterized by using scanning electron microscopy.The results have demonstrated that both center-hollowed and center-solid equilateral triangles in the sizes of several micrometers can be formed on the smooth bed of copper microcrystals.As the deposition duration increased from 0 to 28 hours,the fractal dimensions of the porous silicon was decreased from 2.608 to 2.252,suggesting that the electrochemical deposition can smooth the rough surface of porous silicon films.Compared to the physically deposited metallic films on porous silicon,the electrochemically deposited ones have larger mechanical strength and better electrical conductivity.

Key words: electrochemical deposition, porous silicon, microcrystal, nanostructured materials, fractal dimension

中图分类号:

O484

陈兰莉, 周甫方, 翟保改, 黄远明, . 多孔硅薄膜上铜微晶的形成[J]. 电化学（中英文）, 2008, 14(3): 284-287.

CHEN Lan-li, ZHOU Fu-fang, ZHAI Bao-gai, HUANG Yuan-ming. Formation of Copper Microcrystals on Porous Silicon Films[J]. Journal of Electrochemistry, 2008, 14(3): 284-287.

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链接本文: https://electrochem.xmu.edu.cn/CN/10.61558/2993-074X.1907

https://electrochem.xmu.edu.cn/CN/Y2008/V14/I3/284

参考文献

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多孔硅薄膜上铜微晶的形成

Formation of Copper Microcrystals on Porous Silicon Films

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