Sb在Cu单晶电极上欠电位沉积的电化学和现场STM研究

电化学（中英文） ›› 2003, Vol. 9 ›› Issue (4): 393-401.

Sb在Cu单晶电极上欠电位沉积的电化学和现场STM研究

吴继红,颜佳伟,汤儆,胡文云,毛秉伟

固体表面物理化学国家重点实验室厦门大学化学系,固体表面物理化学国家重点实验室厦门大学化学系,固体表面物理化学国家重点实验室厦门大学化学系,固体表面物理化学国家重点实验室厦门大学化学系,固体表面物理化学国家重点实验室厦门大学化学系福建厦门361005 ,福建厦门361005 ,福建厦门361005 ,福建厦门361005 ,福建厦门361005

收稿日期:2003-11-28 修回日期:2003-11-28 出版日期:2003-11-28 发布日期:2003-11-28

Electrochemical and in-situ Scanning Tunneling Microscopy Studies on the Sb Underpotential Deposition on Cu Single Crystal Electrodes

WU Ji_hong,YAN Jia_wei,TANG Jing,HU Wen_yun, MAO Bing_wei*Chemistry Department, Xiamen University, Xiamen 361005, China)

Received:2003-11-28 Revised:2003-11-28 Published:2003-11-28 Online:2003-11-28

摘要/Abstract

摘要： 　应用循环伏安法和现场扫描隧道显微镜研究了在HClO4和H2SO4两种溶液中Sb于Cu(111)和Cu(100)电极上的欠电位沉积.结果表明,不同的表面原子排列和强吸附阴离子的存在将明显影响Sb的欠电位沉积行为.在结构较为开放的Cu(100)表面,Sb形成的欠电位沉积层结构也较为开放,并且伴随着表面合金的形成;而在密堆积的Cu(111)表面上,Sb形成了致密的单层结构.又当Cu(111)表面存在强吸附的SO42-时,Sb原子首先在SO42-吸附层与Cu表面交接的新台阶处成核,随后通过取代SO42-向上一层晶面发展,表现出独特的成核—生长行为;而在弱吸附的HClO4溶液中,Sb的欠电位沉积系以在晶面上随机形成一些单原子层高度的Sb岛为特征.在Cu(100)表面,通过SO42-的诱导共吸附,欠电位沉积的Sb原子形成了开放性更大的(4×4)结构,不同于在HClO4溶液中所形成的(22×22)R45°结构.

关键词: Sb, Cu(100), Cu(111), 欠电位沉积, 现场STM

Abstract: We report electrochemical and in_situ STM studies on Sb UPD onto Cu(111) and Cu(100) electrode surfaces in HClO4 and H2SO4 solutions. The results indicate that the electrode surface structure as well as anion can considerably influence Sb UPD. Sb UPD on Cu(100) forms open adlayer structures, which is accompanied by surface alloying due to the more open structure of the (100) surface, On Cu(111), a more compact Sb adlayer is formed instead. Anion adsorption influences the dynamics as well as the adlayer structure of Sb UPD. Owing to the strong adsorption of SO42-, the UPD of Sb on Cu(111) in H2SO4 solution initiates at the edge of the terrace followed by spreading towards the centre of the terrace. But in HClO4 solution, atomic height Sb islands are formed on Cu(111). On Cu(100), a (22×22) R45°( superstructure is formed in HClO4 solution. In contrast, a (4×4)superstructure is observed in co_adsorption with SO42- in H2SO4 solution.

中图分类号:

O646

吴继红, 颜佳伟, 汤儆, 胡文云, 毛秉伟. Sb在Cu单晶电极上欠电位沉积的电化学和现场STM研究[J]. 电化学（中英文）, 2003, 9(4): 393-401.

WU Ji_hong, YAN Jia_wei, TANG Jing, HU Wen_yun, MAO Bing_weiChemistry Department, Xiamen University, Xiamen , China). Electrochemical and in-situ Scanning Tunneling Microscopy Studies on the Sb Underpotential Deposition on Cu Single Crystal Electrodes[J]. Journal of Electrochemistry, 2003, 9(4): 393-401.

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https://electrochem.xmu.edu.cn/CN/Y2003/V9/I4/393

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