Pt(S)[n(100)×(110)]表面Cu欠电位沉积

doi:10.61558/2993-074X.2612

摘要/Abstract

摘要： 本文研究了Cu在Pt (100)台阶面和(110)单原子台阶的欠电位沉积. 发现若不考虑阴离子吸附，初始阶段Cu在台阶面和台阶处的电沉积同时进行. 在电沉积满单层的伏安曲线上，可以观察到若干峰. 通过对峰电荷与台阶密度关系的分析，可认为这些峰分别对应于不同的沉积位点. 较正电位的峰对应于Cu在台阶面上的电沉积，而在台阶处Cu的电沉积则因溶液中的阴离子而具有不同的伏安性质. 此外，还发现Pt电极表面的Cu沉积电荷转移数接近2e，且沉积初始阶段阴离子覆盖度不变.

关键词: Pt单晶电极, Cu, 欠电位沉积, 台阶修饰

Abstract: The underpotential deposition of Cu on platinum stepped surfaces composed of (100) terraces and (110) monoatomic steps has been studied in different acidic solutions. It has been found that the initial stage of copper deposition on the surface takes place simultaneously on terrace and step sites, irrespective of the nature of the adsorbing anion. During the voltammetric deposition of a full monolayer, several peaks can be observed. The analysis of the dependence of the peak charge with the step density allows assigning the different peaks to different deposition sites. The peak appearing at most positive potentials corresponds to the deposition of Cu on the terrace sites, whereas deposition on the step sites gives rise to different voltammetric contributions depending on the anion present in solution. Additionally, it has been found that the charge transferred upon Cu deposition is very close to 2e and that the anion coverage does not change during this process from that initially present on the platinum substrate.

Key words: Pt single crystal electrodes, copper, underpotential deposition, step decoration

中图分类号:

O646

Rubén Gisbert, Víctor Climent, Enrique Herrero, Juan M. Feliu. Pt(S)[n(100)×(110)]表面Cu欠电位沉积[J]. 电化学（中英文）, 2012, 18(5): 410-426.

Rubén Gisbert, Víctor Climent, Enrique Herrero, Juan M. Feliu. Underpotential Deposition of Copper on Pt(S)[n(100)x(110)] Stepped Surfaces[J]. Journal of Electrochemistry, 2012, 18(5): 410-426.

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https://electrochem.xmu.edu.cn/CN/Y2012/V18/I5/410

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