光诱导纳米二氧化钛超亲水薄膜SPM图像分析和氧空位浓度理论探讨

电化学（中英文） ›› 2001, Vol. 7 ›› Issue (4): 413-420.

光诱导纳米二氧化钛超亲水薄膜SPM图像分析和氧空位浓度理论探讨

曾人杰,林仲华,方智敏

厦门大学化学化工学院材料科学与工程系化学系,物理化学研究所,固体表面物理化学国家重点实验室,厦门大学化学化工学院材料科学与工程系化学系,物理化学研究所,固体表面物理化学国家重点实验室,厦门大学化学化工学院材料科学与工程系化学系,物理化学研究所,固体表面物理化学国

收稿日期:2001-11-28 修回日期:2001-11-28 出版日期:2001-11-28 发布日期:2001-11-28

Analyses on SPM Images and Theoretical Investigations on Oxygen Vacancy Concentration of Light-induced Nanostructured Titania Super Hydrophilic Films

ZENG Ren_jie *,LIN Zhong_hua,FANG Zhi_min

(Inst. of Chem. and Chem. Engin.,Inst. of Phys. Chem.,State Key Lab. for Phys. Chem. of Solid Surfaces,Xiamen Univ.,Fujian,Xiamen 361005,China

Received:2001-11-28 Revised:2001-11-28 Published:2001-11-28 Online:2001-11-28

摘要/Abstract

摘要： 选用典型的二氧化钛纳米超亲水薄膜 ,用扫描探针显微镜 (SPM )和电化学测试系统进行一般性的表征 .着重运用固体化学和纳米力学的原理 ,对SPM图像、氧空位浓度和超亲水性的机理进行理论分析 ;进一步解释了作者于 1999年底提出的 ,与润湿性能有关的二氧化钛缺陷生成反应方程、普适表面物理模型、两憎 (amphiphobic)表面概念和材料表面设计问题

关键词: 缺陷反应方程, 物理模型, 两憎, 表面设计

Abstract: A typical nanostructured titania super hydrophilic film was chosen for general characterization employing a Scanning Probe Microscope(SPM)and an electrochemical measurement system.Following from the principles of the solid state chemistry and nanomechanics,intensive theoretical. analyses on the SPM images,the oxygen vacancy concentrations and the mechanism of the super hydrophilicity were made;further illuminations on a reaction equation of titania defect formation,a tentative universal surface physical mode for the wet ability,a concept,amphiphobicity,and surface design were carried out after the author's previous introduction and proposal in the end of 1999.

Key words: Defect reaction equation, Physical mode, Amphiphobic, Surface design

中图分类号:

O646

曾人杰,林仲华,方智敏. 光诱导纳米二氧化钛超亲水薄膜SPM图像分析和氧空位浓度理论探讨[J]. 电化学（中英文）, 2001, 7(4): 413-420.

ZENG Ren_jie *,LIN Zhong_hua,FANG Zhi_min . Analyses on SPM Images and Theoretical Investigations on Oxygen Vacancy Concentration of Light-induced Nanostructured Titania Super Hydrophilic Films[J]. Journal of Electrochemistry, 2001, 7(4): 413-420.

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https://electrochem.xmu.edu.cn/CN/Y2001/V7/I4/413

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