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电化学(中英文) ›› 2011, Vol. 17 ›› Issue (2): 212-216.  doi: 10.61558/2993-074X.2833

• 研究论文 • 上一篇    下一篇

核电站结构材料的锌离子注入电化学研究

张胜寒, 檀玉*, 梁可心   

  1. 华北电力大学,环境科学与工程学院,河北 保定 071000
  • 收稿日期:2010-09-28 修回日期:2010-12-30 出版日期:2011-05-28 发布日期:2011-05-05
  • 通讯作者: 檀玉 E-mail:lucifertan@163.com
  • 基金资助:

    国家自然科学基金(50971059), 中央高校基本科研业务费专项资金(10QX42)

Electrochemical Studies of Zinc Injection into the Structure Materials of Nuclear Power Plants

 ZHANG  Sheng-Han, TAN  Yu*, LIANG  Ke-Xin   

  1. School of Environmental Science and Engineering, North China Electric Power University, Baoding 071000, China
  • Received:2010-09-28 Revised:2010-12-30 Published:2011-05-28 Online:2011-05-05
  • Contact: TAN Yu E-mail:lucifertan@163.com

摘要: 应用电化学方法研究了锌离子注入(zinc injection)技术对核电站结构材料,如304L不锈钢、316L不锈钢和600合金在高温水中形成的氧化膜的电化学性能的影响. 锌离子注入压水堆(PWR)一回路技术可有效减少材料应力腐蚀破裂(stress corrosion cracking)和职业辐照. 用动电位扫描法检测材料氧化膜的自腐蚀电位与腐蚀电流,根据Mott-Schottky曲线分析Zn离子注入对材料氧化膜半导体性质的改变. SEM和XPS观察与检测试样表面形貌及其组分. 在Zn离子参与的金属氧化膜生成过程中,可生成Zn-Ni-Cr-Fe 氧化物,从而提高了材料的抗腐蚀能力及改变氧化膜的半导体性质.

关键词: 锌离子注入, 高温水, 结构材料, 氧化膜, 半导体性质

Abstract: The electrochemical and semiconductor characters of oxide films formed on 304L, 316L stainless steel and alloy 600 in high temperature water with zinc addition were studied. Stress corrosion cracking and occupational radiation can be retarded effectively by zinc injection to the primary circuit of pressurized water reactor (PWR). The semiconductor characters of the materials formed by zinc injection was analyzed by Mott-Schottky curves. The surface morphology and components of the corrosion oxide layer were examined and detected by scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS). The result reveals that the smaller crystals and the complex Zn-Cr-Ni-Fe oxide were formed by zinc addition into the high temperature water. Zinc injection is a useful method to enhance the anti-corrosion ability of materials and change the semiconductor character of oxide films formed in Fe/Ni base alloys.

Key words: zinc addition, high temperature water, structure material, oxide film, semiconductor character

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