关键词: 极化电阻, 铜沉积, 硅片/溶液界面

Abstract: Electrochemical characteristics of semiconductor silicon wafers were investigated in dilute hydrofluoric acid solutions using DC polarization and AC impedance techniques under both illuminated and dark conditions. Both techniques were extremely sensitive to the trace amount (10 -9 wt% level) of copper presented in solutions, but only sensitive to the 10 -6 wt% level of non ionic surfactant OHS contained in solutions. The results revealed that the electrochemical reactions took place favorably and became predominated at silicon/solution interface under illuminated condition.

Key words: Polarization Resistance, Copper contamination, Silicon/solution interface