关键词: 约束刻蚀剂层技术, GaAs, 捕捉剂, 微加工

Abstract: Electrochemical etching of single crystal GaAs (111) was performed with a regular mold which resembles the micro_gear patterns. The etched patterns on GaAs was very consistent with the negative copies of the mold when the confined etchant layer technique (CELT) was used. However when the scavenger chemical of H 3AsO 3 was not added in the etching solution, the regular micro_gear patterns of the mold could not be obtained. In addition ,the procedure of fabricating a electrochemical mold is introduced and the characteristics of the mold are briefly discussed.

Key words: Confined etchant layer technique, Scavenger, GaAs, Microfabrication