InGaAs薄膜电共沉积研究

电化学（中英文） ›› 2000, Vol. 6 ›› Issue (4): 463-468.

InGaAs薄膜电共沉积研究

李浴春,王喜莲,韩竞科,韩爱珍,高元恺,杨志伟

哈尔滨工业大学电子科学与技术系!黑龙江哈尔滨150001,哈尔滨工业大学电子科学与技术系!黑龙江哈尔滨150001,哈尔滨工业大学电子科学与技术系!黑龙江哈尔滨150001,哈尔滨工业大学电子科学与技术系!黑龙江哈尔滨150001,哈尔滨工业大学电子科学与技术系!黑龙江哈尔滨150001,山东

收稿日期:2000-11-28 修回日期:2000-11-28 出版日期:2000-11-28 发布日期:2000-11-28

Study on Electrodeposition of InGaAs Thin Film

LI Yu chun 1, WANG Xi lian 1, HAN Jing ke 1, HAN Ai zhen 1* , GAO Yuan kai 1, YANG Zhi wei 2

(1.Department of Electronic Science and Technology Harbin Institute of Technology, Heilongjiang, Harbin 150001, China; 2.Shandong Univers

Received:2000-11-28 Revised:2000-11-28 Published:2000-11-28 Online:2000-11-28

摘要/Abstract

摘要： 本文应用优化工艺条件的电共沉积方法 ,制备发射光近于 1.3～ 1.5μm波长的InGaAs薄膜 .用能谱分析仪进行薄膜成分分析 ;分光光度计和单色仪测量薄膜的透射率 ,同时也测量了薄膜的V I特性、导电类型及其表面形貌 .

关键词: InGaAs薄膜, 电共沉积

Abstract: The principle and the experimental method of the electrodeposition are discribed in detail in this paper.InGaAs thin film was prepared by using optimized electrodeposited conditions. The radiative wave length of the film was between 1.3～1.5 μm, the composition of the film was analyzed by energy spectrometer and the transmission spectrum of the film was measured by spectrophotometer and monochromator. The V I chractristic of the conductive type and the topography of the In x Ga 1 x As film were also studied.

Key words: InGaAs thin film, Electrodeposition, Transmissivity

李浴春,王喜莲,韩竞科,韩爱珍,高元恺,杨志伟. InGaAs薄膜电共沉积研究[J]. 电化学（中英文）, 2000, 6(4): 463-468.

LI Yu chun 1, WANG Xi lian 1, HAN Jing ke 1, HAN Ai zhen 1* , GAO Yuan kai 1, YANG Zhi wei 2 . Study on Electrodeposition of InGaAs Thin Film[J]. Journal of Electrochemistry, 2000, 6(4): 463-468.

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链接本文: https://electrochem.xmu.edu.cn/CN/

https://electrochem.xmu.edu.cn/CN/Y2000/V6/I4/463