化学镀技术在超大规模集成电路互连线制造过程的应用

电化学（中英文） ›› 2006, Vol. 12 ›› Issue (2): 125-133.

化学镀技术在超大规模集成电路互连线制造过程的应用

王增林;刘志鹃;姜洪艳;王秀文;新宫原正三;

陕西师范大学化学与材料科学学院,陕西师范大学化学与材料科学学院,陕西师范大学化学与材料科学学院,陕西师范大学化学与材料科学学院,关西大学工学部机械工学科陕西西安710062,陕西西安710062,陕西西安710062,陕西西安710062,日本大阪,5648680

收稿日期:2006-05-28 修回日期:2006-05-28 出版日期:2006-05-28 发布日期:2006-05-28

Application of Electrolessplating Technology in Interconnection Manufacturing of Ultralarge-scale Integration

WANG Zeng-lin~

(*1),LIU Zhi-juan~(1),JIANG Hong-yan~(1),WANG Xiu-wen~1,Shoso Shingubara~(2)(1.School of Chemistry and Materials Science,Shaanxi Normal University,Xi'an 710062,Shaanxi,China,2.Faculty of Engineering,Kansai University,Osaka,564-8680,Japan

Received:2006-05-28 Revised:2006-05-28 Published:2006-05-28 Online:2006-05-28

摘要/Abstract

摘要： 总结自大马士革铜工艺建立以来,电化学工作者利用化学镀技术围绕该工艺而开展的一系列相关研究,介绍了应用化学镀沉积镍三元合金防扩散层和化学镀铜种子层的研究以及离子束沉积法(Ion ized C lus-ter Beam,ICB)形成Pd催化层后的化学镀铜技术和超级化学镀铜方法.简要叙述化学镀铜技术在超大规模集成电路中的应用,总结化学镀铜技术的研究进展,并指出了今后的发展方向.

关键词: 化学镀铜, 超级化学镀, 大马士革铜互连线, 种子层, 防扩散层

Abstract: In this paper,research progresses in electroless plating for damascene copper process were reviewed.Electroless nickel ternary alloy deposition for barrier layer and electroless copper plating for seed layer were presented.Bottom-up copper fill high-aspect-via-hole and electroless plating after ICB-Pd catalytic layer for seed layer were mainly introduced.The applications of electroless plating in ultralarge-scale integration were discussed,and the developing tendency was also suggested.

Key words: Electroless copper plating, Bottom-up fill, Damascene copper interconnection, Seed layer, Barrier layer

中图分类号:

TN47

王增林;刘志鹃;姜洪艳;王秀文;新宫原正三;. 化学镀技术在超大规模集成电路互连线制造过程的应用[J]. 电化学（中英文）, 2006, 12(2): 125-133.

WANG Zeng-lin~. Application of Electrolessplating Technology in Interconnection Manufacturing of Ultralarge-scale Integration[J]. Journal of Electrochemistry, 2006, 12(2): 125-133.

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链接本文: https://electrochem.xmu.edu.cn/CN/

https://electrochem.xmu.edu.cn/CN/Y2006/V12/I2/125

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