ICP刻蚀硅模板用于PDMS规则超疏水表面的制作

电化学（中英文） ›› 2007, Vol. 13 ›› Issue (3): 264-268.

ICP刻蚀硅模板用于PDMS规则超疏水表面的制作

张润香;张玉龙;林华水;

厦门大学化学化工学院化学系,厦门大学萨本栋微机电中心,厦门大学化学化工学院化学系福建厦门361005,福建厦门361005,福建厦门361005

收稿日期:2007-08-28 修回日期:2007-08-28 出版日期:2007-08-28 发布日期:2007-08-28

PDMS Regularly Superhydrophobic Surfaces Prepared by ICP Etching Silicon Model

ZHANG Run-xiang1,ZHANG Yu-long2,LIN Hua-shui1*

(1.College of Chemistry and chemical engineering,Xiamen University,Xiamen 361005,Fujian,China,2.Pen-Tung Sah Micro-Electro-Mechanical Systems Research Center of Xiamen University,Xiamen University,Xiamen 361005,Fujian,China

Received:2007-08-28 Revised:2007-08-28 Published:2007-08-28 Online:2007-08-28

摘要/Abstract

摘要： 在ICP(inductively coupled plasma)刻蚀后的硅模板上复制聚二甲基硅氧烷(PDMS),经剥离得到含有一定尺寸的规则微柱阵列疏水表面.实验表明,当微柱高度较小时,微柱高度和边长对接触角有正影响,而间距则呈负影响;但如微柱高度较大,则高度对接触角的影响趋小,而边长呈负影响.间距对接触角的影响表现复杂.微柱间距6μm,边长14μm和高14μm微柱阵列的PDMS表面,静态接触角最大,约151°.

关键词: ICP刻蚀, 硅模板, PDMS

Abstract: A series of different dimensions regularly micropillar array hydrophobic Poly(dimethylsiloxane)(PDMS) surfaces were obtained by peeling off PDMS which was poured onto the silicon models.The silicon models were prepared by ICP etching technology.The results indicate that the water contact angle(WCA) was increased with the size and the height of the mocropillar,decreased with increasing the distance of the mocropillar when the height of the micropillar was relative small;if the height of the micropillar was relative big,WCA was decreased with increasing the size of micropillar,meanwhile,the distance of the micropillar was a complex factor to WCA,and the height of the micropillar have little influence.The biggest of WCA on this micopillar array PDMS surface can reach to about 151° when the size,distance,height of the micropillar were 14μm,6μm,14μm respectively.

Key words: ICP etching, silicon model, PDMS, superhydrophobic

中图分类号:

O647

张润香;张玉龙;林华水;. ICP刻蚀硅模板用于PDMS规则超疏水表面的制作[J]. 电化学（中英文）, 2007, 13(3): 264-268.

ZHANG Run-xiang1,ZHANG Yu-long2,LIN Hua-shui1*. PDMS Regularly Superhydrophobic Surfaces Prepared by ICP Etching Silicon Model[J]. Journal of Electrochemistry, 2007, 13(3): 264-268.

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链接本文: https://electrochem.xmu.edu.cn/CN/

https://electrochem.xmu.edu.cn/CN/Y2007/V13/I3/264

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