硅基多孔氧化铝膜的AES多层结构分析和生长过程研究

电化学（中英文） ›› 1999, Vol. 5 ›› Issue (4): 389-394.

硅基多孔氧化铝膜的AES多层结构分析和生长过程研究

吴俊辉,邹建平,朱青,鲍希茂

南京大学物理系固体微结构物理国家重点实验室!南京210093,南京大学物理系固体微结构物理国家重点实验室!南京210093,南京大学物理系固体微结构物理国家重点实验室!南京210093,南京大学物理系固体微结构物理国家重点实验室!南京210093

收稿日期:1999-11-28 修回日期:1999-11-28 出版日期:1999-11-28 发布日期:1999-11-28

AES Multi_layer Structural Analysis of Si based Anodic Porous Alumina Films and Studies on Its Formation Mechanism

Wu Junhui * Zou Jianping Zhu Qing Bao Ximao National Laboratory of Solid State Microstructures and Dept of Phys., Nanjing Univ.,Nanjing 210093)

Received:1999-11-28 Revised:1999-11-28 Published:1999-11-28 Online:1999-11-28

摘要/Abstract

摘要： 将电子束蒸发在硅衬底（Ｐ型，〈１００〉晶向，０－５ Ω·ｃｍ）上厚度４００ｎｍ、纯度９９－９９％的铝膜，浸入具有中等溶解能力的１５ｗｔ％Ｈ２ＳＯ４中，ＤＣ恒压６０Ｖ、恒温０ ℃条件下，进行多孔型过度阳极氧化处理，从而在Ｓｉ基上得到包含空隙层的多孔氧化铝膜．通过对样品ＴＥＭ平面形貌、ＳＥＭ横断面形貌观察以及ＡＥＳ深度剖析，研究了样品的多层结构，并初步讨论了由此揭示出的硅基多孔氧化铝膜的生长过程

关键词: 阳极氧化, 硅基多孔氧化铝, AES, 多层结构

Abstract: nm aluminum films were deposited onto a p_type,0.5 Ω·cm, 〈100〉 oriented silicon wafers using electron beam evaporation technique.Then,the wafers was immersed in 15 wt% H 2SO 4 for porous_type over_anodization under a constant voltage of DC 60V.During the anodization,the temperature of the electrolyte was maintained at 0 ℃.The obtained samples were investigated by means of transmission electron microscopy,scanning electron microscopy,and AES depth profile for multi_layer structural information.In addition, the basic anodic formation mechanism of the Si_based aluminum films was brielfly discussed.

Key words: Anodic oxidation, Si_based porous alumina, AES, Multi_layer structure

中图分类号:

TG174.4

吴俊辉,邹建平,朱青,鲍希茂. 硅基多孔氧化铝膜的AES多层结构分析和生长过程研究[J]. 电化学（中英文）, 1999, 5(4): 389-394.

Wu Junhui * Zou Jianping Zhu Qing Bao Ximao National Laboratory of Solid State Microstructures and Dept of Phys., Nanjing Univ.,Nanjing 210093). AES Multi_layer Structural Analysis of Si based Anodic Porous Alumina Films and Studies on Its Formation Mechanism[J]. Journal of Electrochemistry, 1999, 5(4): 389-394.

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链接本文: https://electrochem.xmu.edu.cn/CN/

https://electrochem.xmu.edu.cn/CN/Y1999/V5/I4/389

参考文献

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