将电子束蒸发在硅衬底（Ｐ型，〈１００〉晶向，０－５ Ω·ｃｍ） 上厚度４００ ｎｍ 、纯度９９－９９ ％的铝膜，浸入具有中等溶解能力的１５ ｗｔ％ Ｈ２ＳＯ４ 中，ＤＣ恒压６０ Ｖ、恒温０ ℃条件下，进行多孔型过度阳极氧化处理，从而在Ｓｉ 基上得到包含空隙层的多孔氧化铝膜．通过对样品ＴＥＭ 平面形貌、ＳＥＭ 横断面形貌观察以及ＡＥＳ深度剖析，研究了样品的多层结构，并初步讨论了由此揭示出的硅基多孔氧化铝膜的生长过程
nm aluminum films were deposited onto a p_type,0.5 Ω·cm, 〈100〉 oriented silicon wafers using electron beam evaporation technique.Then,the wafers was immersed in 15 wt% H 2SO 4 for porous_type over_anodization under a constant voltage of DC 60V.During the anodization,the temperature of the electrolyte was maintained at 0 ℃.The obtained samples were investigated by means of transmission electron microscopy,scanning electron microscopy,and AES depth profile for multi_layer structural information.In addition, the basic anodic formation mechanism of the Si_based aluminum films was brielfly discussed.
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