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硅基多孔氧化铝膜的AES多层结构分析和生长过程研究

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  • 南京大学物理系固体微结构物理国家重点实验室!南京210093,南京大学物理系固体微结构物理国家重点实验室!南京210093,南京大学物理系固体微结构物理国家重点实验室!南京210093,南京大学物理系固体微结构物理国家重点实验室!南京210093

收稿日期: 1999-11-28

  修回日期: 1999-11-28

  网络出版日期: 1999-11-28

AES Multi_layer Structural Analysis of Si based Anodic Porous Alumina Films and Studies on Its Formation Mechanism

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Received date: 1999-11-28

  Revised date: 1999-11-28

  Online published: 1999-11-28

摘要

将电子束蒸发在硅衬底(P型,〈100〉晶向,0-5 Ω·cm) 上厚度400 nm 、纯度99-99 %的铝膜,浸入具有中等溶解能力的15 wt% H2SO4 中,DC恒压60 V、恒温0 ℃条件下,进行多孔型过度阳极氧化处理,从而在Si 基上得到包含空隙层的多孔氧化铝膜.通过对样品TEM 平面形貌、SEM 横断面形貌观察以及AES深度剖析,研究了样品的多层结构,并初步讨论了由此揭示出的硅基多孔氧化铝膜的生长过程

本文引用格式

吴俊辉, 邹建平, 朱青, 鲍希茂 . 硅基多孔氧化铝膜的AES多层结构分析和生长过程研究[J]. 电化学, 1999 , 5(4) : 389 -394 . DOI: 10.61558/2993-074X.1366

Abstract

nm aluminum films were deposited onto a p_type,0.5 Ω·cm, 〈100〉 oriented silicon wafers using electron beam evaporation technique.Then,the wafers was immersed in 15 wt% H 2SO 4 for porous_type over_anodization under a constant voltage of DC 60V.During the anodization,the temperature of the electrolyte was maintained at 0 ℃.The obtained samples were investigated by means of transmission electron microscopy,scanning electron microscopy,and AES depth profile for multi_layer structural information.In addition, the basic anodic formation mechanism of the Si_based aluminum films was brielfly discussed.

参考文献

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