应用蒸镀-阳极氧化法制备结构为ITO/PS/p-S i/A l的多孔硅电致发光器件,在7.5V电压下实现了数小时连续电致发光.实验表明,多孔硅电致发光峰位会随着阳极氧化电流密度的增大、腐蚀时间的延长以及HF酸浓度的降低而蓝移.欲制备工作电压较低、发光时间较长、发光效率较高的电致发光样品,则多孔硅制备时的阳极氧化应使用较低电流密度和较短的腐蚀时间.
Electrically induced visible light emitting porous silicon devices with the structure of ITO/PS/p-Si/Al were fabricated by evaporation-anodic oxidation method.The light emission last for a few hours under 7.5V forward bias conditions.It was shown that the electroluminescence(EL) peaks shifted to the blue with the increasing of current density,erosion time and solution concentration.In order to achieve samples with low driven voltage,long light emission time and high EL efficiency,porous silicon should be prepared under low current density and short erosion time.
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