关键词: 多孔硅(PS), 电致发光(EL), 光致发光(PL), 氧化铟锡(ITO)

Abstract: Electrically induced visible light emitting porous silicon devices with the structure of ITO/PS/p-Si/Al were fabricated by evaporation-anodic oxidation method.The light emission last for a few hours under 7.5V forward bias conditions.It was shown that the electroluminescence(EL) peaks shifted to the blue with the increasing of current density,erosion time and solution concentration.In order to achieve samples with low driven voltage,long light emission time and high EL efficiency,porous silicon should be prepared under low current density and short erosion time.