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研究论文

电沉积硅烷分子印迹膜修饰电极的制备及其应用

  • 王桂林 ,
  • 王荣 ,
  • 吴霞琴 ,
  • 章宗穰
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  • 上海师范大学生命与环境科学学院化学系,上海师范大学生命与环境科学学院化学系,上海师范大学生命与环境科学学院化学系,上海师范大学生命与环境科学学院化学系 上海200234,上海200234,上海200234,上海200234

收稿日期: 2008-05-28

  修回日期: 2008-05-28

  网络出版日期: 2008-05-28

Electrodeposition of Sol-gel Imprinted Films Modified Electrode and its Application for 3,4-Dihydroxybenzoic Acids Determination

  • WANG Gui-lin ,
  • WANG Rong ,
  • WU Xia-qin ,
  • ZHANG Zong-rang
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  • (Department of Chemistry,Shanghai Normal University,Shanghai 200234,China

Received date: 2008-05-28

  Revised date: 2008-05-28

  Online published: 2008-05-28

摘要

以3,4-二羟基苯甲酸作模板分子,在玻碳电极表面恒电位沉积四甲氧基硅烷和苯基三甲氧基硅烷,经无水乙醇将模板分子洗脱,制得硅溶胶-凝胶分子印迹膜电极.该电极能有效地抑制电化学氧化过程中3,4-二羟基苯甲酸的电聚合及其同分异构体2,4-二羟基苯甲酸对测定的干扰.实验表明,该修饰电极对3,4-二羟基苯甲酸测定的线性浓度范围为1.0×10-5~8.0×10-4mol.L-1,浓度检测下限为5.0×10-6mol.L-1.

本文引用格式

王桂林 , 王荣 , 吴霞琴 , 章宗穰 . 电沉积硅烷分子印迹膜修饰电极的制备及其应用[J]. 电化学, 2008 , 14(2) : 130 -134 . DOI: 10.61558/2993-074X.1877

Abstract

The sol-gel molecularly imprinted films modified glassy carbon electrode was prepared by electrodeposition of tetramethoxysilane(TMOS) and phenyltrimethoxysilane(PTMOS) with chronoamperometry in the presence of template molecules 3,4-dihydroxybenzoic acid(3,4-DHBA) followed by extraction with ethanol.The modified electrode could successfully avoid the polymerization of oxidized 3,4-DHBA and the interference of 2,4-DHBA.A linear concentration response curve was obtained from 1.0 × 10-5 mol·L-1 to 8.0×10-4 mol·L-1,with the detected concentration limit of 5.0 × 10-6 mol·L-1.
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