掺铒硫化锌薄膜界面态及其对驰豫发光影响的研究

电化学（中英文） ›› 1995, Vol. 1 ›› Issue (3): 348-352.

掺铒硫化锌薄膜界面态及其对驰豫发光影响的研究

王余姜，柳兆洪，陈振湘

厦门大学物理学系

收稿日期:1995-08-28 修回日期:1995-08-28 出版日期:1995-08-28 发布日期:1995-08-28

Study on the Surface States of Zinc Sulfide Thin Film Doped with Erbium and their Effect on the Relaxation Luminance

Wang Yujiang;Liu Zhaohong;Chen Zhenxiang

(Dept.of Phys.Xiamen Unive.,Xiamen,361005

Received:1995-08-28 Revised:1995-08-28 Published:1995-08-28 Online:1995-08-28

摘要/Abstract

摘要： 应用ＸＰＳ及电容－电压测试研究硫化锌薄膜的界面态，采用电脉冲瞬态激发技术研究Ｅｒ￣（３＋）激活的ＺｎＳ薄膜特征跃迁非指数衰减过程的弛豫发光，分析了由于氧吸附形成的界面态对弛豫发光的影响。

关键词: 硫化锌薄膜, 氧吸附, 驰豫发光

Abstract: X-ray photoelectron spectrum and characteristics of the capacity,versus thevoltage of the thin film devices are measured to study the surface states of the zinc sulfide thin film.The transient electroluminescence excited by pulses shows the relaxation luminance peaks during anon-exponential decay process of the characteristic transitions activated by Er￣(3+) in the ZnS directcurrent thin film electroluminescence (DCTFEL) devices.The surface structures of ZnS:Cu,Cl,Erfilm with the absorption of oxygen,and the effect of the surface states on the relaxation luminance ofthe devices are discussed.

Key words: ZnS thin film, Absorption of oxygen, Relaxation luminance

中图分类号:

TN104.3

王余姜，柳兆洪，陈振湘. 掺铒硫化锌薄膜界面态及其对驰豫发光影响的研究[J]. 电化学（中英文）, 1995, 1(3): 348-352.

Wang Yujiang;Liu Zhaohong;Chen Zhenxiang . Study on the Surface States of Zinc Sulfide Thin Film Doped with Erbium and their Effect on the Relaxation Luminance[J]. Journal of Electrochemistry, 1995, 1(3): 348-352.

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https://electrochem.xmu.edu.cn/CN/Y1995/V1/I3/348