n型多孔硅的电发光性能及其XPS和LIMA表征

电化学（中英文） ›› 1996, Vol. 2 ›› Issue (2): 140-143.

n型多孔硅的电发光性能及其XPS和LIMA表征

李国铮,张承乾,张强

山东大学化学系,厦门大学化学系

收稿日期:1996-05-28 修回日期:1996-05-28 出版日期:1996-05-28 发布日期:1996-05-28

Electroluminescent Property of n Type Porous Si and Its Characterization by XPS and LIMA

Li Guozheng Zhang Chenqian

(Department of Chemistry, Shandong University, jinan 250100) Zhang Qiang (Department of Chemistry, Xiamen University, Xiamen 361005

Received:1996-05-28 Revised:1996-05-28 Published:1996-05-28 Online:1996-05-28

摘要/Abstract

摘要： ｎ型多孔硅的电发光性能及其ＸＰＳ和ＬＩＭＡ表征①李国铮＊张承乾张强（山东大学化学系，济南２５０１００）（厦门大学化学系，厦门３６１００５）多孔硅（ＰＳ）的发光性能与其化学组成和结构的关系已为人们所关注．曾有人认为，发光是由于纳米级多孔硅的量子限制效应...

Abstract: The chemical composition and structure of electroluminescent porous Si(PS) on n Si, prepared by photoelectrochemical etching method, were investigated by using XPS and LIMA. The results show that electroluminescence(EL) intensity depends on the formation potential of PS. The relation between EL property and the results of XPS and LIMA is also discussed.

Key words: Porous silicon, XPS, LIMA, Electroluminescence

中图分类号:

O644.1

李国铮,张承乾,张强. n型多孔硅的电发光性能及其XPS和LIMA表征[J]. 电化学（中英文）, 1996, 2(2): 140-143.

Li Guozheng Zhang Chenqian . Electroluminescent Property of n Type Porous Si and Its Characterization by XPS and LIMA[J]. Journal of Electrochemistry, 1996, 2(2): 140-143.

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