n型多孔硅的电发光性能及其XPS和LIMA表征

doi:10.61558/2993-074X.3066

电化学（中英文） ›› 1996, Vol. 2 ›› Issue (2): 140-143. doi: 10.61558/2993-074X.3066

n型多孔硅的电发光性能及其XPS和LIMA表征

李国铮,张承乾,张强

山东大学化学系,厦门大学化学系

收稿日期:1996-05-28 修回日期:1996-05-28 发布日期:1996-05-28 出版日期:1996-05-28

Electroluminescent Property of n Type Porous Si and Its Characterization by XPS and LIMA

Li Guozheng Zhang Chenqian

(Department of Chemistry, Shandong University, jinan 250100) Zhang Qiang (Department of Chemistry, Xiamen University, Xiamen 361005

Received:1996-05-28 Revised:1996-05-28 Online:1996-05-28 Published:1996-05-28

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O644.1

李国铮, 张承乾, 张强. n型多孔硅的电发光性能及其XPS和LIMA表征[J]. 电化学（中英文）, 1996, 2(2): 140-143.

Li Guozheng Zhang Chenqian. Electroluminescent Property of n Type Porous Si and Its Characterization by XPS and LIMA[J]. Journal of Electrochemistry, 1996, 2(2): 140-143.

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n型多孔硅的电发光性能及其XPS和LIMA表征

Electroluminescent Property of n Type Porous Si and Its Characterization by XPS and LIMA

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