隧道电子和局域场对固液界面纳米区域反应的影响——控电位下的Si(111)表面的STM诱导纳米刻蚀

doi:10.61558/2993-074X.2653

电化学（中英文） ›› 1997, Vol. 3 ›› Issue (2): 132-135. doi: 10.61558/2993-074X.2653

隧道电子和局域场对固液界面纳米区域反应的影响——控电位下的Si(111)表面的STM诱导纳米刻蚀

谢兆雄,蔡雄伟,施财辉,毛秉伟,田昭武

厦门大学固体表面物理化学国家重点实验室物理化学研究所

收稿日期:1997-05-28 修回日期:1997-05-28 发布日期:1997-05-28 出版日期:1997-05-28

Effects of Tunneling Electrons and Local Field on Nanometer Region Solid / Liquid Interfacial Reactions ——Potential Controlled STM Induced Nanoscale Modification of H terminated Si(111) Surfaces

Xie ZhaoXiong Cai XiongWei Shi CaiHui Mao BingWei Tian ZhaoWu

(State Key Laboratory of Physical Chemistry of Solid Surfaces, Institute of Physical Chemistry, Dept. of Chem., Xiamen Univ., Xiamen 361005

Received:1997-05-28 Revised:1997-05-28 Online:1997-05-28 Published:1997-05-28

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中图分类号:

TN305

谢兆雄, 蔡雄伟, 施财辉, 毛秉伟, 田昭武. 隧道电子和局域场对固液界面纳米区域反应的影响——控电位下的Si(111)表面的STM诱导纳米刻蚀[J]. 电化学（中英文）, 1997, 3(2): 132-135.

Xie ZhaoXiong Cai XiongWei Shi CaiHui Mao BingWei Tian ZhaoWu. Effects of Tunneling Electrons and Local Field on Nanometer Region Solid / Liquid Interfacial Reactions ——Potential Controlled STM Induced Nanoscale Modification of H terminated Si(111) Surfaces[J]. Journal of Electrochemistry, 1997, 3(2): 132-135.

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隧道电子和局域场对固液界面纳米区域反应的影响——控电位下的Si(111)表面的STM诱导纳米刻蚀

Effects of Tunneling Electrons and Local Field on Nanometer Region Solid / Liquid Interfacial Reactions ——Potential Controlled STM Induced Nanoscale Modification of H terminated Si(111) Surfaces

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