隧道电子和局域场对固液界面纳米区域反应的影响——控电位下的Si(111)表面的STM诱导纳米刻蚀
谢兆雄, 蔡雄伟, 施财辉, 毛秉伟, 田昭武
Effects of Tunneling Electrons and Local Field on Nanometer Region Solid / Liquid Interfacial Reactions ——Potential Controlled STM Induced Nanoscale Modification of H terminated Si(111) Surfaces
Xie ZhaoXiong Cai XiongWei Shi CaiHui Mao BingWei Tian ZhaoWu
电化学（中英文）
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1997, (2): 132
-135
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