利用约束刻蚀剂层技术提高硅的刻蚀分辨率
Improved Etching Resolution on Silicon by the Confined Etchant Layer Technique
Received date: 1997-02-28
Revised date: 1997-02-28
Online published: 1997-02-28
祖延兵, 谢雷, 毛秉伟, 穆纪千, 谢兆雄, 田昭武, 孙立宁 . 利用约束刻蚀剂层技术提高硅的刻蚀分辨率[J]. 电化学, 1997 , 3(1) : 14 -14 . DOI: 10.61558/2993-074X.3554
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