利用约束刻蚀剂层技术提高硅的刻蚀分辨率

1997 , Vol. 3 >Issue 1: 14 - 14

研究论文

利用约束刻蚀剂层技术提高硅的刻蚀分辨率

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收稿日期: 1997-02-28

修回日期: 1997-02-28

网络出版日期: 1997-02-28

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Improved Etching Resolution on Silicon by the Confined Etchant Layer Technique

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State Key Lab. for Phys. Chem. of the Solid Surf., Dept. of Chem., Xiamen Univ., Xiamen 361005.
Robost Inst., Univ. of Tech. of Harbin, Harbin 150001.

Received date: 1997-02-28

Revised date: 1997-02-28

Online published: 1997-02-28

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祖延兵, 谢雷, 毛秉伟, 穆纪千, 谢兆雄, 田昭武, 孙立宁 . 利用约束刻蚀剂层技术提高硅的刻蚀分辨率[J]. 电化学, 1997 , 3(1) : 14 -14 . DOI: 10.61558/2993-074X.3554

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