隧道电子和局域场对固液界面纳米区域反应的影响①——控电位下的Ｓｉ（１１１）表面的ＳＴＭ诱导纳米刻蚀谢兆雄＊蔡雄伟施财辉毛秉伟田昭武（厦门大学固体表面物理化学国家重点实验室物理化学研究所化学系厦门３６１００５）扫描隧道显微技术（ＳＴＭ）目前已成为纳米加...

H terminated n Si(111) surface was found to be etched in 0.5% HF solution in nanometer scale while scanning the STM tip when the substrate potential was somehow lower than the open circuit potential at tunneling condition of V b=+1.0 V (tip positive), I t=1 nA. Much more stable Si surface was achievable at potentials much more negative than the open circuit potential (such as 500 mV negative to OCP) under the same tunneling condition. Furthermore, the etching rete at less negative potential was found to be somehow related to the tunneling current. These results indicate that the STM induced local modification of Si(111) surface is electrochemically controllable. A proposed model of the hole injection through the tunneling current is put forward to account for the induced etching of Si surface.