用电结晶法制取了〔Co(2.5nm)/Pt(2.5nm)〕n(n=50)超晶格.通过控制过电位以控制多层膜的生长.应用了具有高空间实分解能的反射电子显微镜法(REM)直接观察Pt(Ⅲ)面上的原子台阶以及在Pt(Ⅲ)上的Co的生长方式,发现在高过电位E=-1.15V(vs.Hg/Hg2SO4)下Co以三维生长方式成膜.用小角度X射线衍射法证实在Pt(Ⅲ)面上确实形成了人工超晶格,其周期d=5nm.
The electrocrystallization of Co(2.5 nm)/Pt(2.5 nm) n (n ≥50) multilayer has been carried out under potential control, based on observation of reflection electron microscopy (REM). Monatomic steps on Pt single crystal surfaces have been imaged using a conventional transmission electron microscope in the reflection made. The REM images have revealed three dimintional growth of Co electrocrystallization at high polarization of -1.15 V (vs.Hg/Hg 2SO 4). The structure of the specimen was examined by small or high angle X ray diffration technique. The modulation period of a multilayered structure is 5.0 nm.
1新庄辉也.金属人工格子の磁性とイ云寸道.日本金属学会会报,1992,31:7972常光幸美,林安德.电析による金属人工格子の作制.日本金属学会会报,1992,31(9):8493JyokoY,KashiwabaraS,HayashiY.Reflectionelectronmicroscopyofcopperelectrocystalizationonplat-inum.Mater.Trans.JIM,1992,33:11494李宗全.反射电子显微术原理和应用.物理,1989,18(12):7155春山志郎等.化学纟总说NO7分子しべルからみた界面の电化学.日本化学会编.学会出版社センタ,1975:59