多孔硅电致发光随时间淬灭伴随的峰位红移现象

1998 , Vol. 4 >Issue 1: 60 - 65

研究论文

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收稿日期: 1998-02-28

修回日期: 1998-02-28

网络出版日期: 1998-02-28

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The Time Dependent Red Shift Phenomenon of Visible Electroluminescence of Porous Silicon

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(Center for Intelligent Materials Research, College of Chem. and Molecular Engineering,Peking Univ., Beijing 100871)

Received date: 1998-02-28

Revised date: 1998-02-28

Online published: 1998-02-28

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王荣秋 . 多孔硅电致发光随时间淬灭伴随的峰位红移现象[J]. 电化学, 1998 , 4(1) : 60 -65 . DOI: 10.61558/2993-074X.2678

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