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研究论文

两步法制备多孔硅及其表征II :脉冲电流法(英文)

  • 程璇 ,
  • 刘峰名 ,
  • 温作新 ,
  • 林昌健 ,
  • 田中群
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  • 厦门大学化学系 福建厦门361005,厦门大学化学系 福建厦门361005,厦门大学化学系 福建厦门361005,厦门大学固体表面物理化学国家重点实验室化学系 福建厦门361005,厦门大学化学系 福建厦门361005,厦门大学化学系分析测试中心 福建厦门361005

收稿日期: 2001-02-28

  修回日期: 2001-02-28

  网络出版日期: 2001-02-28

Fabrications and Characterizations of Porous Silicon by Two-step Techniques II: Pulse Current Application

  • CHENG Xuan ,
  • LIU Feng?ming ,
  • WEN Zuo?xin ,
  • LIN Chang?jian ,
  • TIAN Zhong?qun
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  • (1. Dept. of Chem., 2. State Key Lab. for Phys. Chem. of Solid Surfaces, 3. Center for Instrumental Anal. and Measurements, Xiamen Univ., Xi

Received date: 2001-02-28

  Revised date: 2001-02-28

  Online published: 2001-02-28

摘要

采用脉冲阳极 /阴极电流和化学氧化两步法分别在 1∶1的氢氟酸和乙醇溶液中及 2 0 %硝酸溶液中制备出孔径约为 0 .5~ 3μm ,厚度大约为 10~ 2 0 μm的多孔硅样品 ,将获得的多孔硅结构再进一步用扫描电子显微镜和拉曼光谱仪进行表面形貌和光学性质的考察 .与恒电流 -化学氧化两步法制得的多孔硅相比 ,用脉冲电流法得到的多孔硅的孔径范围较大 ,且多孔层较厚 .制备时加紫外光照显著提高了多孔硅的厚度 ,并发生“蓝移”现象 .用脉冲电流法制得的多孔硅在老化后 (在干燥器放置一年 )同样观察到光致发光明显增强 .

本文引用格式

程璇 , 刘峰名 , 温作新 , 林昌健 , 田中群 . 两步法制备多孔硅及其表征II :脉冲电流法(英文)[J]. 电化学, 2001 , 7(1) : 78 -84 . DOI: 10.61558/2993-074X.3242

Abstract

Porous silicon structures were formed by two?step technique consisting of pulse current applications in 1∶1 hydrofluoric acid and ethanol solutions and chemical oxidation in 20% nitric acid solutions. Their surface morphologies and optical properties were characterized by scanning electron microscope (SEM) and Raman spectrometer, and compared with those obtained by constant current application. More uniform pore formation on p(100) silicon wafers was observed by pulse current application. Illumination with an ultraviolet lamp during the pulse current application accelerated the macropore formation, accordingly, the optical properties were changed.

参考文献

[1] ChengX ,LiuFM ,WenZXetal.Fabricationsandcharacterizationsofporoussiliconbytwo -steptech niques ,I:ConstantCurrentApplication[J].Electrochemistry(inChinese) ,2 0 0 1,6 (4 ) ,399~ 4 0 5. [2 ] BrandtMS ,FuchsHD ,StutzmannM ,etal.Theoriginofvisibleluminescencefrom‘poroussilicon’ :Anewinterpretation[J].SolidStateCommun .1992 ,81(4 ) ,30 7~ 312 .
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