本文研究了腐蚀介质氨水、成膜剂铁氰化钾及磨粒γ_Al2 O3 浓度、抛光压力和抛光转速对铜化学_机械抛光速率的影响 .解释了各影响因素的影响机理 .实验表明了在一定范围内抛光速率与抛光压力及抛光转速呈线性关系 ,组分浓度对抛光速率的影响为非线性关系 ,Preston系数Kp是变量 .最大抛光速率的化学_机械抛光液的配方为 :4 %K3Fe(CN) 6 + 1 %NH3·H2 O + 2 5%γ -Al2 O3,Kp=0 .0 2 3 83 ;工艺条件为 :3 0 0r/min、80kpa .最佳抛光效果为 :Ra=50nm ,Rmax=4 0 0nm
Dependence of polishing rates of copper on concentrations of NH 3·H 2O, passivator K 3,γ_Al 2O 3 abrasives and polishing pressures, polishing rotative rates were studied. Dependent mechanisms were explained. It was shown a linear relation between polishing and polishing pressures and rotative rates within some range, non_linear relation between polishing and various reagent concentrations. Preston coefficient was varied. CMP recipe of the best polishing rate was gained: 4%K 3Fe(CN) 6+1%NH 3·H 2O+25%γ-Al 2O 3, K p=0.023 83. Technics conditions were 300 rpm and 80 kpa. The best polishing effect was R a=50 nm, R max =400 nm.
[1] SteigerwaldJM ,MurarkaSP ,GutmannRJ .ChemicalMechanicalPlanarizationofMicroelectricMaterials[M ].NewYork,USA .JohnWiley&SonsInc,1996,49P .
[2] AhmadiG ,XiaX .Amodelformechanicalwearandabrasiveparticleadhesionduringthechemicalmechanicalpolishingprocess[J].J .Electrochem.Soc.,2001,148(3):G99～109.
[3] ShankarSR ,ZhangLu,BabuSV .Transportphenomenainchemicalmechanicalpolishing[J].J .Elec trochem.Soc.,1999,146(11):4263～4272.
[4] WrschkaP ,HernandezY ,HsuTS ,etal.Polishingparameterdependenciesandsurfaceoxidationofchemi calmechanicalpolishingofAlthinfilms[J].J .Electrochem.Soc.,1999,146(7):2689～2696.
[5] LiuCW ,DaiBT ,TsengWT ,etal.Modelingofthewearmechanismduringchemical_mechanicalpolishing[J].J .Electrochem.Soc.,1996,143(2):716～721.
[6] HUYue_hua,HEHan_wei,HUANGKe_long.StudyonelectrochemicalbehaviorofcopperinNH3·H2Oso lutionmediumincludingK3[Fe(CN )6]duringCMP[J].Electrochemistry(inChinese),2001,7(4):480～486
