将刻有微沟道的芯片固定在旋转圆盘电极上,在旋转对流条件下于微沟道中电沉积铜.微沟道深度为1μm,宽度分别为0.35μm,0.50μm,0.70μm.研究了芯片的旋转、电流密度以及Cu2+浓度等对微沟道中铜沉积的影响.实验表明,在旋转对流传质下,铜在微沟道中的沉积速率比静止芯片时的约快2~3倍.较低的Cu2+浓度和适中的沉积电流密度更有利于超等厚沉积的形成.
Silicon chips patterned with treneches were fixed onto a rotating electrode. Copper was electrodeposited into the trenches under rotating hydrodynamic conditions The sizes of the trenches are 1 m in height and 0.35 m, 0.50 m and 0.70 m in width, respectively. The effects of rotating of the chip, the current density and the concentration of Cu~(2+ )on the filling of thetrenches were studied. It is found that lower current density and moderate concentration of Cu~(2+)resulted in a void free filling of the trenches.
[1]CahnRW,HassonP,Weinheimeds.MaterialScienceandTechnology:AComprehensiveTreatment[M].Vol.16.Processingofsemiconductors/Vol.Ed.JacksonKA.NewYork:VCH1996.
[2]AndricacosPC.Copperon chipinterconnections:Abreakthroughinelectrodepositiontomakebetterchips[J].Interface,1999,8:32~37.
[3] AndricacosPC,UzohC,DukovicJO,etal.Damascencecopperelectroplatingforchipinternnections[J].IBMJ.Res.Develop.,1998,42:567~574.
[4] ReidJ,MayerS,BroadbentE,etal.FactorsinfluencingdamascenefeaturefillusingcopperPVDandelectroplating[J].SolidStateTechnology,2000,July:87~98.
[5] TianZQ,SunJJ.MicrosystemandElectrochemistry[J].Electrochemistry,2000,6:1~9.
[6] CaoY,TaephaisitphongseP,ChalupaR,etal.Threeadditivesmodelofsuperfillingofcopper[J],J.Electrochem.Soc.,2001,148:C466~C472.
[7] KangM,GrossME,GewirthAA.AtomicForceMicroscopyExaminationofCuElectrodepositioninTrenches[J].J.Electrochem.Soc.,2003,150:C292~C301.
[8] TanM,HarbJN.AdditivebehaviorduringcopperelectrodepositioninsolutionscontainingCl-,PEG,andSPS[J].J.Electrochem.Soc.,2003,150:C420~C425.