将刻有微沟道的芯片固定在旋转圆盘电极上,在旋转对流条件下于微沟道中电沉积铜.微沟道深度为1μm,宽度分别为0.35μm,0.50μm,0.70μm.研究了芯片的旋转、电流密度以及Cu2+浓度等对微沟道中铜沉积的影响.实验表明,在旋转对流传质下,铜在微沟道中的沉积速率比静止芯片时的约快2～3倍.较低的Cu2+浓度和适中的沉积电流密度更有利于超等厚沉积的形成.

Silicon chips patterned with treneches were fixed onto a rotating electrode. Copper was electrodeposited into the trenches under rotating hydrodynamic conditions The sizes of the trenches are 1 m in height and 0.35 m, 0.50 m and 0.70 m in width, respectively. The effects of rotating of the chip, the current density and the concentration of Cu~(2+ )on the filling of thetrenches were studied. It is found that lower current density and moderate concentration of Cu~(2+)resulted in a void free filling of the trenches.