应用直流电沉积法在多孔氧化铝模板中制备了高度有序的CdS纳米线阵列,并由XRD、Raman、SEM、TEM和HRTEM等进行物理化学表征.结果表明,沉积在多孔氧化铝模板中的CdS呈六角结构,c轴沿孔长度方向定向生长.紫外吸收光谱研究表明,随着纳米线尺寸的减小,纳米线阵列的吸收边向短波长方向移动,荧光光谱测量显示,CdS纳米线阵列的荧光强度高于氧化铝模板,而且在可见光区的荧光特性与激发波长无关.

Highly ordered CdS nanowire arrays have been prepared by using dc electrodeposition in the porous anodic aluminum oxide template. Scanning electro microscopy (SEM) and transmission electron microscopy (TEM) reveal that the nanowires are uniform and highly ordered. The measurements of X-ray diffraction and high-resolved electron microscopy (HRTEM) show that the nanowires are hexagonal structure with the crystallographic c-axis preferentially oriented along the length of the pore. The UV-Vis absorption spectra of CdS nanowire arrays show that the absorption edges of the nanowire arrays shift towards short wavelength with the decrease of the nanowire size. The photoluminescence measurements show that the PL intensity increases after the AAO is filled with CdS nanowires, and a strong fluorescence peak appears. At the same time, we also find that the fluorescence characteristics in visible region are independent on the excitation wavelength.