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研究论文

陶瓷表面无敏化活化法微细化学镀铜

  • 续振林
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  • 中科院福建物质结构研究所二部,中科院福建物质结构研究所二部,中科院福建物质结构研究所二部,中科院福建物质结构研究所二部,中科院福建物质结构研究所二部,中科院福建物质结构研究所二部 福建厦门361012中国科学院研究生院,北京100039 ,福建厦门361012 ,福建厦门361012中国科学院研究生院,北京100039 ,福建厦门361012 ,福建厦门361012 ,福建厦门361012

收稿日期: 2005-05-28

  修回日期: 2005-05-28

  网络出版日期: 2005-05-28

Selective Electroless Copper Plating Micro-pattern on Ceramics Without Sensitisation and Activation

  • XU Zhen-lin~
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  • (1, 2), GUO Qi-long~(1), SHEN Yi-cheng~(1, 2), ZHAO Xiong-chao~(1), HONG Yan-ping~(1), GU Zhi-jun~(*1)(1.Institute of Matter Structure Chinese Academy of Sciences, Corrosion Division, Xiamen 361012,China, 2.Graduate School of the Chinese Academy of Sciences,Beijing 100039,China.

Received date: 2005-05-28

  Revised date: 2005-05-28

  Online published: 2005-05-28

摘要

本文提出一种新的化学镀铜工艺,与激光微细刻蚀技术相结合可在Al2O3基底上实现无敏化活化化学镀铜,获得光亮致密、分辨率较高(40μm),导电性良好的化学镀层.

本文引用格式

续振林 . 陶瓷表面无敏化活化法微细化学镀铜[J]. 电化学, 2005 , 11(2) : 193 -198 . DOI: 10.61558/2993-074X.1639

Abstract

The purpose of this article is to provide a new technology of electroless copper plating without palladium activation steps. By combining the technology of laser micro-etching with the new copper-plating bath, copper plating on ceramics was obtained. The experimental results showed that the solution used for copper electroless plating was stable and the copper coating obtained was bright,dense with good electrical conductivity.The line definition was about 40 μm. The electroless Cu films deposited from this system were gentle and required simple operating conditions.

参考文献

[1]LiuZC(刘正春),HeQG(贺全国),TangJX(汤建新),etal.Anewapproachontheactivetreatmentfor electrolesscopperplatingonglass[J].ChineseJournal ofChemistry.2003,21(1):1~3. [2]NatividadE,LatasteE,LahayeM,etal.Chemicaland morphologicalstudyofthesensitization,activationand CuelectrolessplatingofAl2O3polycrystallinesubstrate[J].SurfaceScience,2004,557:129~143. [3]ZhangX(张欣),YangSC(杨素纯).Studyonthe activationofnonmetalelectrolesscopperwithsemicon ductoroxide[J].Electroplating&PollutionControl,1989,9(1):19~21. [4]WangJ(王建),YuZZ(郁祖湛).Developmentofla serplating[J].PlatingandFinishing,1999,21(2):1~5. [5]ZengWM(曾为民),WuCS(吴纯素),WuYS(吴荫顺).Electrolesscopperplating[J].JournalofNan changInstituteofAeronauticalTechnology,1998,(1):83~92. [6]ZhaoXCh(赵雄超),GuoQL(郭琦龙),DengQS(邓群山),etal.StudyonthenewtechniqueofCumi cro platingbasedonceramics[C].Shanghai:12thNa tionalConferenceonElectrochemistry,2003:G25. [7]PanCT.Selectiveelectrolesscopperplatingmicro coil assistedby248nmexcimerlaser[J].Microelectronic Engineering,2004,71:242~251. [8]XuZJ(徐自金).Therelationshipbetweenthestability agentsandthequalityofthecopperfilmsdepositedin theelectrolesscopperbaths[J].InformationofPrinted Circuit,2000,(3):33~36. [9]YaoYB(姚亦斌),XieT(谢涛),GaoYM(高英敏).HandbookofPhysicalChemistry[M].Shanghai:ShanghaiTechnologyPublishingCompany,1985.720~750. [10]LiHN(李鸿年),ZhangSG(张绍恭),SongZY(宋子玉),etal.PracticalPlatingProcess[M].Bei jing:NationalDefenceIndustryPublishingCompany,1990:430~434 [11]Kondo,Koji,Murakawa,etal.Electrolesscopperplat ingsolutionandprocessforelectrolesslyplatingcopper[P].U.S.Pat.4834796,1989. [12]KondoK,IshikawaJ,TakenakaO,etal.Accelera tionofelectrolesscopperdepositioninthepresenceof excesstriethanolamine[J].J.Electrochem.Soc.,1991,138(12):3629~3633. [13]MasahiroOita,MasaoMatsuoka,ChiakiIwakura.Depositionrateandmorphologyofelectrolesscopper filmfromsolutionscontaining2,2’dipyridyl[J].ElectrochimicaActa,1997,42(9):1435~1440.
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