利用光刻技术与碱性腐蚀等工艺预写晶格图样,采用电化学腐蚀方法在P〈100〉型硅基底制备二维大孔硅光子禁带结构.结果表明:在预写有晶格图样的P〈100〉型硅基底上由电化学阳极氧化制备的二维大孔硅,其孔洞的生长速率、深宽比及表/侧面形貌与电解质配比方案及阳极电流密度均密切相关.在优化的电化学工艺参数下得到的空气洞阵列,具有近乎完美的二维四方晶格,晶格常数为3.8μm,孔洞直径约3.0μm,孔洞深宽约90μm,深宽比达30.该方法可用于制备在中红外或近红外波段具有完全二维光子带隙的光子晶体.

A two-dimensional photonic band structure based on macroporous silicon with a gap centered at 20μm has been achieved for the first time.A medium doped p-type(100) silicon substrate was patterned by the standard photolithograpgy and alkaline efthing.And this pre-patterned sample was then etched 90 μm deep by electrochemical pore formation in the mixture of hydrofluoric-acid and dimethylformamide(DMF) to produce a quare lattice of circular air rods with a lattice constant of 3.8 μm and the very high aspect ratio up to 30.The optimized electrochemical parameters such as eletrolytical components and the current density were 5 % HF(by mass)+7 % H_(2)O(by mass)+DMF and 12 mA/cm~(2) respectively.the pore formation technique should allow the fabrication of photonic lattices with a complete two-dimensional photonic band gap in the middle and near infrared.