以喷金云母片为基体,浓度为正常镀液5%的电镀镍液作母液,应用电化学扫描隧道显微镜在纳米尺度范围内在线原位观察光亮剂对镀层微观形貌的影响.实验发现,对不加光亮剂的镀液,所得镀层尽管无光亮性,但镀后的粗糙度与峰谷值HA-V明显降低;加有全光亮性光亮剂的镀液,虽可得到全光亮镀层,但其粗糙度与峰谷值HA-V却增加了,半光亮剂对峰谷值与光亮性的影响处于以上两者之间,证明光亮剂的作用机理不是微观整平作用,纳米尺度内的微观整平性与镀液的光亮性没有必然的联系.
In this work,the gold-plated mica was used for the substrate,the concentration of 5% of normal plating solution for the nickel was used as the mother solution,and the effect for the deposition by the brighter with ECSTM was in-situ detected.The solution for deposition without the brighter has no brightness,though the values of the roughness and the H_(A-V) have reduced in evidence after deposition;the solution for deposition with the complete brighter although has great brightness,the values of the roughness and the H_(A-V) have increased(after) deposition;the solution for deposition with the half brighter has a moderate effect on the H_(A-V) and (brightness).Hence,the brighter effect is not the micro-leveling effect,and the micro-leveling effect has no direct relation with the brightness.
[1]X ie ZhaoX iong(谢兆雄),M ao B ingW e i(毛秉伟),Zhuo X iangDong(卓向东),et al.In situ stud ies ofcopper electrodepostion on HOPG by using ECSTM[J].E lectrochem istry,1996,2:164.
[2]W an L ijun(万立骏),W ang Chen(王梁),Bai Chun li(白春礼).An introduction to electrochem ical scann ingprobe m icroscopy[J].Technology lead ing edge&Sc i-ence Comm ent(科技前沿与学术评论),2002,(6):50~53.
[3]Zhang Qun.Scann ing tunneling m icroscop[J].Know l-edge Lectures,2002,29:47~49.
[4]Hu YanL ing,Hu RongGang,ShaoM inHua,et al.In-si-tu ECSTM investigation on passivation surface for poly-crystalline stain less steel[J].Journal of Ch inese E lec-tron M icroscopy Soc iety,2001,5:631~635.
[5]An M Z(安茂忠).An E lectrop lating Theories andTechnologies[M].Haerb in:Haerb in Institute of Tech-nology Press.2004.
[6]Cai X iongW e i(蔡雄伟),X ie ZhaoX iong(谢兆雄),Zhuo X iangDong(卓向东),et al.Scann ing TunnelingM icroscop ic Stud ies of Rough Au Surfaces w ith Atom icResolution[J].E lectrochem istry,1997,3:21~25.
[7]Darrort V,Troyon M,Ebothe J,et al.Quantitativestudy by atom ic force m icroscopy and spectrophotom etryof the roughness and brightness of electrodepositedn ickel in the presence of add itives[J].The SolidF ilm s,1995,(165):557.
[8]Jens A D Jensen,Per O A Persson,Karen Pantleon,etal.E lectrochem ically deposited n ickel m embranes:process m icrostructure property relationsh ips[J].Sur-face and Coating Technology,2003,(172):79~89.
[9]L iu P ing(刘平),Yao Pe i(姚?).Study on the prepa-ration of tip for scann ing tunneling m icroscopy[J].Mo-dem istic Instrum ents,2003,(6):30~32.
[10]Yu Chang(余昶),W ang Hu i(王晖).A chem icalm ethod for removing the oxide layer of STM tungstentips[J].Vacuum E lectron ic,2004,(2):31~33.
[11]Yao Pe i(姚?),L i ChunYan(李春艳),L iu P ing(刘平),et al.Preparation of STM tips and the improve-m ent on its electrochem ical device[J].Journal of Ch i-nese E lectronM icroscopy Soc iety,2003,22:256~258.
[12]X ie ZhaoX iong(谢兆雄),M ao B ingW e i(毛秉伟),Yang FangZu(杨防祖).In S itu Stud ies ofH ighly O ri-ented Zn-N i A lloy E lectrop lating by Using ECSTM.Chem ical Journal of Ch inese Un iversities,1998,19:609~612.
[13]Jianwe i L iu,X iangYang Chen,M ingW ang Shao.In itialstages of N i P electrodeposition growth morphology andcomposition of deposits[J].Journal of Crystal G rowth.2003,(252):297~301.