王增林 . 化学镀技术在超大规模集成电路互连线制造过程的应用[J]. 电化学, 2006 , 12(2) : 125 -133 . DOI: 10.61558/2993-074X.1710

[1]Andricacos P C,Uzoh C,Dukovic J O,et al.Dam a-scene copper electrop lating for ch ip interconnections[J].IBM J.Res.Dev.,1998,42(5):567~574. [2]Datta M.App lications of electrochem ical m icrofabrica-tion:An introduction[J].IBM J.Res.Dev.,1998,42(5):563~566. [3]Chang J C,Chen M C.Passivation of Cu by sputter-de-posited Ta and reactively sputter-deposited Ta-n itridelayers[J].J.E lectrochem.Soc.,1998,145:3170. [4]Chen X,Peterson G G.,Goldberg C,et al.D isp lace-m ent activation of tan lalum d iffusion barrier layer elec-troless coper deposition[J].J.M ater.Res.,1999,14:2043. [5]Chang J C,ChenM C.Properties of th in Ta-N film s re-actively sputtered on Cu/S iO/S i substrates[J].Th inSolid F ilm s,1998,322:213. [6]Hayash i Tadao,M atsuoka M asao,Nawafune H idem i.E lectrolesss P lating,Foundation and App lication[M].Tokyo:N ikan Technology Pub lish,1998.109. [7]Su llivan E J O,SchrottA G,Paunovic M,et al.E lec-trolessly deposited d iffusion barriers for m icrolectron ics[J].IBM J.Res.Dev.,1998,42:607. [8]Osaka T,Takano N,Kurokawa T,et al.Fabrication ofelectroless N iReP barrier layer on S iO2w ithout sputteredseed layer[J].Solid-State Letter,2002,5(1):C7~C10. [9]Osaka T,Takano N,Kurokawa T,et al.E lectrolessn ickel ternary alloy deposition on S iO2for app lication tod iffusion barrier layer in copper interconnect technology[J].J.E lectrochem.Soc.,2002,149(11):C573~C578. [10]Hasegawa M,Negish i Y,Nakan ish i T,et al.E ffectsof add itives on copper electrodeposition in subm icrom e-ter trenches[J].J.E lectrochem.Soc.,2005,152(4):C221. [11]Shacham-D iam and Y,Sverd lov Y,Petrov N.E lectro-less deposition of th in-film cobalt-tungsten-phosphoruslayers using tungsten phosphoric ac id(H3[P(W3O10)4])for ULSI and MEMS app lications[J].J.E lectrochem.Soc.,2001,148(3):C162~C167. [12]Shacham-D iam and Y,Dub in V,Angyal M.E lectro-less copper deposition forULSI[J].Th in Solid F ilm s,1995,262:93~103. [13]Shacham-D iam and Y,Dub in V.Copper electrolessdeposition technology for u ltra-large-scale integration(ULSI)m etallization[J].M icroelectric Engineering,1997,33:47~58. [14]Shacham-D iam and Y,Lopatin S.H igh aspect ratioquarter-m icron electroless copper integrated technology[J].M icroelectric Engineering,1997,37~38:77~78. [15]W u Y,W an C C,W ang Y Y.Fabrication of a poten-tial N iMoP d iffusion barrier/seed layer for Cu intercon-nect via electroless deposition[J].Journal of the E lec-tron ic M aterial,2005,345(5):541. [16]Hsu H H,Hsieh C C,ChenM H,et al.D isp lacem entactivation of tantalum d iffusion barrier layer for electro-less copper deposition[J].J.E lectrochem.Soc.,2001,148:C598~C590. [17]Nakahara L A,Ohmori T,Hash imoto K.The influ-ence of hydrofluoric ac id concentration on electrolesscopper deposition onto silicon[J].J.E lectroanal.Chem.,1992,333:363. [18]Nakahara L A,Ohmori T,Hash imoto K,et al.E ffectsofHF solution in the electroless deposition process onsilicon surfaces[J].J.Vac.Sc i.Technol.A,1993,11:763. [19]Patterson J C,O'Relly M,Crean G.M,et al.Selec-tive electroless copper m etallization on a titan ium n i-tride barrier layer[J].M icroelectron.Eng.,1997,33:65~73. [20]Patterson J C,Dheasuna C N,Barrett J,et al.E letro-less copperm etallization of titan ium n itride[J].App l.Surf.Sc i.,1993,91:124~128. [21]W ang Z L,Ida T,Sakaue H,et al.E lectroless p latingof copper on m etal-n itride d iffusion barriers in itiated byd isp lacem ent p lating[J].E lectrochem.Solid-StateLett.,2003,6(3):C38~C41. [22]Shoso Sh ingubara,W ang Zenglin,Takayuk i Takahagi.M ethod of m anufacturing mu ltilevel interconnection[P].Japan Patent:0330029,2005. [23]Sh ingubara S,W ang Z,Ida T,et al.D irect E lectro-less Copper P lating on BarrierM etals w ithout Pd Cata-lyst[Z].IEEE Int.Interconnect Conf.,2002,176. [24]W ang Z,Yaegash iO,Sakaue H,et al.Suppression ofnative oxide growth in sputtered TaN film s and its ap-p lication to Cu electroless p lating[J].J.App l.Phys.,2003,94(7):4697~4701. [25]W ang Z,Yaegash i O,Sakaue H,et al.Influence ofsurface oxide of sputtered TaN on d isp lacem ent p latingof Cu[J].Jpn.J.App l.P hys.,2003,42(4B):1843~1846. [26]Gand ikota S,M cGurik C,Padh i D,et al.Character-ization of electroless copper as a seed layer for sub-0.1um interconnects[Z].IEEE International InterconnectConference,2001,30. [27]Andryuschenko T,Re id J.E lectroess and electrolyticseed repair effect on dam ascene feature fill[Z].IEEEInternational Interconnect Conference,2001,30. [28]Yam ada Isao,Takaoka G.Ion ized c luster beam s:phys-ics and technology[J].J.App l.Phys.,1993,32:2121~2141. [29]W ang Z,Yaegash i O,Sakaue H,et al.H ighly Adhe-sive E lectroless Cu Layer Form ation Using an U ltraTh in Ion ized C luster Beam(ICB)-Pd Catalytic Layerfor Sub-100nm Cu Interconnections[J].Jpn.J.Ap-p l.Phys.Express Letter,2003,42(10B):1223~1225. [30]Shoso Sh ingubara,W ang Zenglin,Takayuk i Takahagi.M ethod of produc ing mu ltilayer interconnection struc-ture[P].Japan Patent:327715,2005. [31]W ang Z,Sakaue H,Takahagi T,et al.Characteriza-tion of electroless-p lated Cu film over Pd catalytic layerform ed by an ion ized c luster beam[J].J.E lectro-chem.Soc.,2005,152(10):C684 [32]Sh ingubara S,W ang Z,Yaegash i O,et al.Bottom-upfill of copper in h igh aspect ratio via holes by electro-less p lating[c].Proceed ings of IEDM 03,6.3.1-6.3.4. [33]Sh ingubara S,W ang Z,Yaegash i O,et al.Bottom-upfill of copper in deep subm icrom eter holes by electro-less p lating[J].E lectrochem.Solid-State Letter,2004,7(6):C78~C80. [34]W ang Z,Yaegash i O,Sakaue H,et al.Bottom-up fillfor subm icrom eter copper via holes ofULSIs by electro-less p lating[J].J.E lectrochem.Soc.,2004,151(12):C781~C785. [35]W ang Z,Yaegash i O,Sakaue H,et al.E ffect of add i-tives on hole filling characteristics of electroless copperp lating[J].Jpn.J.App l.Phys.,2004,43(10):7000~7001. [36]W ang Z Yaegash i O,Sakaue H,et al.Bottom-up cop-per fill w ith add ition of m ercapto alkyl carboxylic ac idin electroless[J].E lectroch im ica Acta,2006,51:2442. [37]Shacham-D iam and Y.E lectroless copper deposition u-sing glyoxylic ac id as reduc ing agent for u ltralarge scaleintegration m etallization[J].E lectrochem.Solid-StateLetter,2000,3(6):279~282.