欢迎访问《电化学(中英文)》期刊官方网站,今天是
研究论文

低压化成铝箔磷酸处理的研究与应用

  • 孙岚
展开
  • 固体表面物理化学国家重点实验室厦门大学化学系,肇庆华锋电子铝箔有限公司,肇庆华锋电子铝箔有限公司,肇庆华锋电子铝箔有限公司,固体表面物理化学国家重点实验室厦门大学化学系 福建厦门361005,广东肇庆526060,广东肇庆526060,广东肇庆526060,福建厦门361005

收稿日期: 2006-11-28

  修回日期: 2006-11-28

  网络出版日期: 2006-11-28

Studies and Applications of Phosphoric Acid Treatment on Low Voltage Formed Aluminum Foils

  • SUN Lan~
Expand
  • (1),QIU Hui-rong~(2),TAN Hui-zhong~(2),CHENG Xue-yan~(2),LIN Chang-jian~(*1)(1.State Key Laboratory for Physical Chemistry of Solid Surface,Department of Chemistry,Xiamen University,Xiamen 36100,Fujian,China,2.Zhaoqing Huafeng Electronic Aluminum Foil CO.,LTD 526060,Guangdong,China

Received date: 2006-11-28

  Revised date: 2006-11-28

  Online published: 2006-11-28

摘要

对铝电解电容器低压化成箔作表面磷酸处理,研究了磷酸浓度、温度和作用时间对铝箔比容和耐水合升压时间的影响,优化最佳工艺条件,明显提高了铝电解电容器低压化成箔的性能,并应用于生产线.

本文引用格式

孙岚 . 低压化成铝箔磷酸处理的研究与应用[J]. 电化学, 2006 , 12(4) : 421 -424 . DOI: 10.61558/2993-074X.1765

Abstract

The surface of low voltage formed foil for Al electrolysis capacitors is treated with phosphoric acid solution.The effects of concentration of phosphoric acid solution,temperature and process time on specific capacitance and the time of hydration resistance with standing voltage are studied.The optimum condition is presented.The properties of low voltage formed foil have been improved by applying this method on the product line.

参考文献

[1]A lw itt R S.The anod ic oxidation of alum inum in thepresence of a hydrated oxide[J].J.E lectro.Chem.Soc.,1967,114(8):843~848. [2]A lw itt R S.Crystalline anod ic oxide film s on alum inum[J].Japanese M etal Surface Technology,1981,32(5):226~234. [3]Shen X ing-su(沈行素),Yan Ji-xin(严季新).Com-posite crystalline anod ic oxide film on alum inumⅠ.Form ing of anod ic alum inum oxide film in the presenceof hydrous oxide layer[J].E lectron ic Components andM aterials(in Ch inese),1996,15(4):12~19. [4]Chen Guo-guang(陈国光),Cao W an-zhen(曹婉真).E lectrolytic Capac itors[M].X i’an:X i’an Jiaotong U-n iversity Press,1993. [5]W e i Chun-cai(韦春才),Zhao Quan-zhu(赵泉柱).Form ing m echan ism and improving approach on defectin alum inum anode oxide film[J].Journal of ShenyangPolytechn ic Un iversity,1999,21(1):48~49. [6]JiangM e i-lian(蒋美连),Feng Zhe-sheng(冯哲圣),Chen Jin-ju(陈金菊),et al.Hydration resistancetreatm ent on anod ic alum ina film s for alum inum electro-lytic capac itors[J].E lectron ic Components and M ate-rials,2005,24(8):53~55.
文章导航

/