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研究论文

掺铝Co_3O_4的制备及其电容性能研究

  • 葛鑫 ,
  • 陈野 ,
  • 张春霞
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  • 哈尔滨工程大学材料科学与化学工程学院,哈尔滨工程大学材料科学与化学工程学院,哈尔滨工程大学材料科学与化学工程学院,哈尔滨工程大学材料科学与化学工程学院 黑龙江哈尔滨150001,黑龙江哈尔滨150001,黑龙江哈尔滨150001,黑龙江哈尔滨150001

收稿日期: 2007-08-28

  修回日期: 2007-08-28

  网络出版日期: 2007-08-28

Prerapation and Supercapacitor Property of Al Doped Co_3O_4

  • GE Xin ,
  • CHEN Ye ,
  • ZHANG Chun-xia
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  • (College of Material science and Chemical Engineering,Harbin Engineering University,Harbin 150001,Heilongjiang,China

Received date: 2007-08-28

  Revised date: 2007-08-28

  Online published: 2007-08-28

摘要

以KOH作沉淀剂制备掺杂Al(Ⅲ)的Co3O4粉体.X射线衍射显示,掺Al的Co3O4不改变其晶型结构.循环伏安、恒流充放电等测试表明,化学掺Al后的Co3O4电极,其比容量提高,当Co(Ⅱ)与Al(Ⅲ)的摩尔比为1∶0.05时,在0~400 mV的电位区间内,5 mA/cm2电流密度下,单电极放电比容量可达518.07 F/g.

关键词: 电容器; Co3O4; 掺杂; Al

本文引用格式

葛鑫 , 陈野 , 张春霞 . 掺铝Co_3O_4的制备及其电容性能研究[J]. 电化学, 2007 , 13(3) : 249 -252 . DOI: 10.61558/2993-074X.1816

Abstract

With KOH as precipitator to prepare Aluminum doped Co3O4,X-ray diffraction indicated that the doping Al did not change the crystal structure of Co3O4.Electrochemical properties of the sample were tested by cyclic voltammetry and constant-current charge/discharge.The results showed that the chemical doping improved the specific capacitance.When the mol ratio of Co(Ⅱ) with Al(Ⅲ)was 1∶0.05,the specific capacitance was up to 518.07 F/g within 0~400 mV potenitial at current density 5 mA/cm2.

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