欢迎访问《电化学(中英文)》期刊官方网站,今天是
研究论文

2,2′-联吡啶在化学镀铜中的作用研究

  • 杨斌 ,
  • 杨防祖 ,
  • 黄令 ,
  • 许书楷 ,
  • 姚光华 ,
  • 周绍民
展开
  • 厦门大学化学化工学院化学系固体表面物理化学国家重点实验室,厦门大学化学化工学院化学系固体表面物理化学国家重点实验室,厦门大学化学化工学院化学系固体表面物理化学国家重点实验室,厦门大学化学化工学院化学系固体表面物理化学国家重点实验室,厦门大学化学化工学院化学系固体表面物理化学国家重点实验室,厦门大学化学化工学院化学系固体表面物理化学国家重点实验室 福建厦门361005,福建厦门361005,福建厦门361005,福建厦门361005,福建厦门361005,福建厦门361005

收稿日期: 2007-11-28

  修回日期: 2007-11-28

  网络出版日期: 2007-11-28

Research of 2,2′-dipyridine on Electroless Copper Plating Using Sodium Hypophosphite as Reductant

  • YANG Bin ,
  • YANG Fang-zu ,
  • HUANG Ling ,
  • XU Shu-kai ,
  • YAO Guang-hua ,
  • ZHOU Shao-min
Expand
  • (State Key Laboratory of Physical Chemistry of the Solid Surfaces,Department of Chemistry,College ofChemistry and Chemical Engineering,Xiamen University,Xiamen 361005,Fujian,China

Received date: 2007-11-28

  Revised date: 2007-11-28

  Online published: 2007-11-28

摘要

研究了以次磷酸钠作还原剂的化学镀铜体系,添加剂2,2′-联吡啶对化学镀铜沉积速率、次磷酸钠阳极氧化和铜离子阴极还原、以及镀层形貌、结构和组分存在状态的影响.结果表明,2,2′-联吡啶对化学沉积起阻化作用.电化学线性伏安扫描实验显示,镀液中加入2,2′-联吡啶,次磷酸钠的氧化峰电势有所负移,但峰电流减小;铜离子的还原峰电势负移,但峰电流逐渐增大.扫描电子显微镜(SEM)、能量色散谱(EDS)、X射线衍射(XRD)及X射线光电子能谱(XPS)等实验分别表明,添加剂使镀层致密和光亮、镍含量降低;镀层为Cu-Ni合金,呈面心立方结构,无明显晶面择优取向现象;镀层中铜和镍以金属态存在,磷的质量含量小于0.05%.

本文引用格式

杨斌 , 杨防祖 , 黄令 , 许书楷 , 姚光华 , 周绍民 . 2,2′-联吡啶在化学镀铜中的作用研究[J]. 电化学, 2007 , 13(4) : 425 -430 . DOI: 10.61558/2993-074X.1847

Abstract

In the bath of the electroless copper plating using sodium hypophosphite as reductant,the effects of 2,2′-dipyridine on the deposition rate,anodic oxidation of sodium hypophosphite,cathodic reduction of copper ions,surface morphologies,structure and the existing status of the deposit components were examined.The results showed that,2,2′-dipyridine hindered the electroless deposition.Experiments of liner sweep voltammetry(LSV) indicated that,as the addition of 2,2′-dipyridine to the electrolyte,the oxidation peak potential of sodium hypophosphite shifted to a more negative value but the peak current decreased;the reducing peak potential of copper ions moved to a more negative value whereas the peak current increased.Scanning electron microscope(SEM)、energy dispersive spectroscopy(EDS)、X-ray diffraction(XRD) and X-ray photoelectron spectroscopic(XPS) experiments displayed that,the additive caused the deposit in the compacter,brighter and lower nickel content.the deposit was Cu-Ni alloy in face-centered cubic structure without obvious crystal face preferred orientation.the copper and nickel in the deposit were in metal state,and the weight content of phosphorus was less than 0.05%.

参考文献

[1]Cheng D H,Xu W Y,Zhang Z Y,et al.Electrolesscopper plating using hypophosphite as reducing agent[J].Met Finish,1997,95(1):34-37. [2]Huang A,Chen K M.Mechanism of hypophosphite-re-duced electroless copper plating[J].J ElectrochemSoc,1989,136(1):72-75. [3]Silvain J F,Chazelas J,Trombert S J.Copper electro-less deposition on NiTi shape memory alloy:an XPSstudy of Sn?Pd?Cu growth[J].Applied Surface Sci-ence,2000,153(4):211-221. [4]Chu S Z,Sakairi M,Takahashi H.Copper electrolessplating at selected areas on aluminum with pulsed Nd-YAG laser[J].J Electrochem Soc,2000,147(4):1423-1434. [5]Shacham-Diamand Y,Lopatin S.Integrated electrolessmetallization for ULSI[J].Electrochimica Acta,1999,44(21-22):3639-3649. [6]Norkus E,Vaaakelis A,Jaaaiauskienaa J,et al.Obtai-ning of high surface roughness copper deposits by elec-troless plating technique[J].Electrochimica Acta,2006,51(17):3495-3499. [7]Li J,Kohl P A.The acceleration of nonformaldehydeelectroless copper plating[J].J Electrochem Soc,2002,149(12):C631-C636. [8]Li J,Kohl P A.The deposition characteristics of accel-erated nonformaldehyde electroless copper plating[J].J Electrochem Soc,2003,150(8):C558-C562. [9]Wang Z L,Obata R,Sakaue H.Bottom-up copper fillwith addition of mercapto alkyl carboxylic acid in elec-troless plating[J].Electrochimica Acta,2006,51(12):2442-2446. [10]Ohno I,Wakabayash O,Haruyama S.Anodic oxida-tion of reductants in electroless plating[J].J Electro-chem Soc,1985,132:2323. [11]Yang F Z(杨防祖),Yang B(杨斌),Wu L Q(吴丽琼),et al.Studies on Cu-Ni alloy electroless platingusing sodium hypophosphite as reductant[J].Electro-plating and Finishing(in Chinese),2006,25(7):1-3. [12]Yang F Z(杨防祖),Yang B(杨斌),Lu B B(陆彬彬),et al.Electrochemical study of electroless copperplating using sodium hypophosphite as reductant[J].Acta Physico-Chimica Sinica,2006,22(11):1317-1320. [13]Norkus E,Vaskelis A,Jaciauskiene J,et al.Environ-mentally friendly natural polyhydroxylic compounds inelectroless copper plating baths:application of xylitol,D-mannitol and D-sorbitol as copper(II)ligands[J].J Applied Electrochemistry,2005,35:41-47. [14]Wu L Q(吴丽琼),Yang F Z(杨防祖),Huang L(黄令),et al.An electrochemical study of electroless cop-per plating using glyoxylic acid as reducing agent[J].Electrochemistry(in Chinese),2005,11(4):402-406. [15]Feldstein N,Lancsek TS.A newtechnique for inves-tigating the electrochemical behavior of electroless plat-ing bath and the mechanism of electroless nickel plat-ing[J].J Electrochem Soc,1971,118(6):869-874. [16]Hu Guanghui(胡光辉),Wu Huihuang(吴辉煌),Yang Fangzu(杨防祖).Effect of additives on electro-less deposition rate[J].Acta Physico-Chimica Sinica(in Chinese),2004,20(3):327-330. [17]Nuzzi F J.Accelerating the rate of electroless copperplating[J].Plating and Surface Finishing,1983,70(1):51-54. [18]Hung A.Effects of thiourea guanidine hydrochloride onelectroless copper plating[J].J Electrochem Soc,1985,132(5):1047-1049. [19]Briggs D,Seah MP.Practical surface analysis,X-rayphotoelectron spectroscopy[M].Wiley,Vol.1,1990.608.
文章导航

/