将氧化亚硅,铝和石墨经过2步球磨盐酸刻蚀处理,再包覆碳,可制得纳米孔-S i/G/C复合材料,其比容量高达600 mAh/g,电化学循环性能稳定,但首次放电效率较低.氧化亚硅和铝球磨后再经高温热处理,可以促使氧化亚硅完全还原.高温下A l2O3产物的晶型结构由γ相转为稳定难溶的α相,硅/A l2O3复合材料难以刻蚀制孔,而硅/A l2O3/G/C复合材料则显示较高的首次放电效率但循环稳定性较差.

The nano-porous Si/G/C composite was obtained by two-step ball milling with SiO,A1 and graphite,along with HCl acid etching followed by carbon incorparation.This composite demonstrated the reversible capacity of 600 mAh/g with excellent cycling stability,but low initial cycle efficiency is low.A high-temperature treatment after ball-milling of SiO and A1 could promote the complete reduction of SiO.However,the crystalline structure of Al2O3 product changed from γ-phase to α-phase,which it can no longer be etched by HCl.The Si/Al2O3/G/C composite exhibited higher efficiency at the first cycle but relatively poorer cyclability.