再布线层（RDL）由多层的介电材料和电镀铜材料构成，是晶圆级先进封装中用于重新布局芯片表面引脚的基本结构。作为电解液中的最关键化学成分，电镀铜添加剂正在快速发展迭代，以满足工业界对高速沉积和细线宽、窄线距的应用需求。然而，探究电镀添加剂的分子结构与电镀铜材料性能之间复杂的构效关系仍然是一项重要挑战。本研究对比考察了一组三苯甲烷类染料分子结晶紫（GV）和甲基绿（MG）作为整平剂在高速 RDL电镀中的应用效果和作用机制。结果表明，MG相比GV分子在仅增加一个季铵化的端基的条件下，即可显著增强分子的电化学极化并实现镀层形貌平整。结合量子化学计算、电化学原位光谱及微观结构分析表征，我们发现MG具有更强的静电吸附、更高的表面覆盖以及明显的多添加剂协同，从而实现对电镀铜线路形貌的精确调平。本研究阐明了三苯甲烷衍生物整平剂体系的吸附机制及筛选依据，并提出了适用于高速电镀铜应用的添加剂备选结构。

Redistribution Layer (RDL), composed of layered dielectrics and electroplated copper materials, is a basic structure to rearrange numerous I/O pads on the chip surface in wafer-level advanced packaging. As the key chemicals in electrolyte baths, electroplating additives have undergone continuous development to meet the industrial needs for high-speed and fine-line/fine-pitch applications. Meanwhile, the intricate relationships between additive chemical structures and electroplated copper properties are yet to be well understood. In this work, a pair of triphenylmethane-based dye molecules, i.e. gentian violet (GV) and methyl green (MG), was comparatively investigated as levelers for high-speed RDL copper electroplating. Compared to GV, significantly stronger electrochemical polarization and tunable deposit morphology can be achieved by MG with just one extra quaternized amine terminal. Combining quantum chemical computations, in situ spectroelectrochemical analyses, and microstructural characterization, it is found that MG possesses enhanced electrostatic adsorption, surface coverage and multi-additive synergies, enabling tailored copper trace morphology. This study elaborates the adsorption mechanism and screening criteria of triphenylmethane-derived levelers and presents a candidate additive structure for high-speed copper electroplating.