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研究论文

化学镀钴过程中添加剂糖精对结晶取向的调控

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  • 陕西师范大学,化学化工学院,新概念传感器与分子研究院,应用表面与胶体化学教育部重点实验室,陕西,西安,710119,中国
罗雨欣, 王静静, 王露, 闫子一, 马艺, 薄鑫, 党静霜, 王增林

网络出版日期: 2025-03-28

The Effect of Saccharin on the Crystallization Behavior of Electroless Cobalt Plating

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  • Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education; Institute of New Concept Sensors and Molecular Materials; School of Chemistry and Chemical Engineering; Shaanxi Normal University; Xi'an, Shaanxi, China, 710119.
Yuxin Luo, Jingjing Wang, Lu Wang, Ziyi Yan, Yi Ma, Xin Bo, Jingshuang Dang, Zenglin Wang

Online published: 2025-03-28

摘要

在化学镀钴过程中,我们发现添加剂糖精的加入可明显改变化学镀钴层表面的形貌、织构取向及镀层的导电性。研究表明,当糖精添加量为3 mg·L-1时,钴镀层由无序大晶粒转变为蜂巢状结构,具有密排六方(HCP)钴晶体的(002)择优取向,其电阻率降低至14.4 μΩ·cm,经过热处理后,电阻率进一步降低至10.7 μΩ·cm,这对于其在芯片中的应用具有重要价值。当糖精浓度升高时,晶粒逐渐细化,呈现“石林”状结构,择优取向不变,而糖精的加入在一定程度上提高了镀钴膜的纯度。通过密度泛函理论对钴镀层结晶行为的研究表明,糖精分子可吸附于钴密排晶面的特定c位点,抑制abc堆积方式生长,诱导晶体按ab堆积方式生长,从而实现HCP(002)晶面的择优生长。

本文引用格式

罗雨欣, 王静静, 王露, 闫子一, 马艺, 薄鑫, 党静霜, 王增林 . 化学镀钴过程中添加剂糖精对结晶取向的调控[J]. 电化学, 0 : 0 . DOI: 10.61558/2993-074X.3533

Abstract

In the process of electroless cobalt plating, the saccharin additive can significantly change the surface morphology, texture orientation, and conductivity of the cobalt coating layer. When the amount of saccharin was 3 mg·L-1, the cobalt coating transformed from disordered large grains to a honeycomb structure, with a preferred orientation of (002) facet on hexagonal close-packed (HCP) cobalt crystals. The resistivity of the cobalt film decreased to 14.4 μΩ·cm, and after annealing treatment, the resistivity further decreased to 10.7 μΩ·cm. When the concentration of saccharin increases, the grain size gradually refines and presents a "stone forest" structure, with the preferred orientation remaining unchanged. The addition of saccharin also slightly improves the purity of cobalt coating to a certain extent. Through the study of the crystallization behavior of cobalt electroless plating, saccharin molecules can adsorb to specific c-sites on the cobalt dense crystal plane, inhibiting the growth of abc stacking arrangement and inducing the crystal growth in ab stacking mode, thereby achieving optimal growth of HCP (002) texture.
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