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研究论文

液栅型石墨烯场效应管的缓冲液浓度和pH响应特性

  • 杜晓薇 ,
  • 成霁 ,
  • 郭慧 ,
  • 金庆辉 ,
  • 赵建龙
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  • 1. 中国科学院上海微系统与信息技术研究所传感技术联合国家重点实验室,上海 200050;2. 中国科学院大学,北京 100049

收稿日期: 2014-09-12

  修回日期: 2014-10-30

  网络出版日期: 2015-04-23

基金资助

国家科技支撑计划项目(No. 2012BAK08B05)、国家863计划项目(No. SS2014AA06A506)和上海市信息化发展专项项目(No. 201101042, No. 11CH_15, No. 11391901900)资助

Response Characteristics of Solution-Gated Graphene Field Effect Transistors to Buffer Solution pH and Concentration

  • DU Xiao-Wei ,
  • CHENG Ji ,
  • GUO Hui ,
  • JIN Qing-Hui ,
  • ZHAO Jian-Long
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  • 1. State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; 2. University of Chinese Academy of Sciences, Beijing 100049, China

Received date: 2014-09-12

  Revised date: 2014-10-30

  Online published: 2015-04-23

摘要

本文使用化学气相沉积(Chemical Vapor Deposition,CVD)石墨烯制作了高灵敏度、低噪声的液栅型石墨烯场效应管(Solution-Gated Graphene Field Effect Transistors,SGFETs),并测试了该器件对磷酸盐缓冲液(Phosphate Buffered Saline,PBS)浓度和pH的响应特性. 随缓冲液浓度的增大,SGFETs转移特性曲线的最小电导点向左偏移,偏移量与溶液浓度的自然对数呈线性关系. 随pH的增大,其最小电导点向右偏移,偏移量与溶液pH呈线性关系. 该响应特性对石墨烯生化传感器排除外界影响因素有一定的指导作用.

本文引用格式

杜晓薇 , 成霁 , 郭慧 , 金庆辉 , 赵建龙 . 液栅型石墨烯场效应管的缓冲液浓度和pH响应特性[J]. 电化学, 2015 , 21(2) : 167 -171 . DOI: 10.13208/j.electrochem.140912

Abstract

High-sensitivity and low-noise solution-gated graphene field effect transistors (SGFETs) were fabricated using chemical vapor deposition (CVD) graphene as a channel material, and their response characteristics to concentration and pH of phosphate buffered saline (PBS) were measured. The minimum conductance point shifted to left with increasing concentration, and the offset showed a linear relationship with the natural logarithm of concentration. While, the minimum conductance point shifted to right with increasing pH, and the offset showed a linear relationship with pH. The research on these response characteristics may give proper guidance to SGFETs’s application.

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