液栅型石墨烯场效应管的缓冲液浓度和pH响应特性

doi:10.13208/j.electrochem.140912

电化学（中英文） ›› 2015, Vol. 21 ›› Issue (2): 167-171. doi: 10.13208/j.electrochem.140912

液栅型石墨烯场效应管的缓冲液浓度和pH响应特性

杜晓薇^1,2，成霁^1,2，郭慧¹，金庆辉^1*，赵建龙¹

1. 中国科学院上海微系统与信息技术研究所传感技术联合国家重点实验室，上海 200050；2. 中国科学院大学，北京 100049

收稿日期:2014-09-12 修回日期:2014-10-30 发布日期:2015-04-23 出版日期:2015-04-28
通讯作者: 金庆辉 E-mail:jinqh@mail.sim.ac.cn
基金资助:
国家科技支撑计划项目(No. 2012BAK08B05)、国家863计划项目(No. SS2014AA06A506)和上海市信息化发展专项项目(No. 201101042, No. 11CH_15, No. 11391901900)资助

Response Characteristics of Solution-Gated Graphene Field Effect Transistors to Buffer Solution pH and Concentration

DU Xiao-wei^1,2, CHENG Ji^1,2, GUO Hui¹, JIN Qing-hui^1*, ZHAO Jian-long¹

1. State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; 2. University of Chinese Academy of Sciences, Beijing 100049, China

Received:2014-09-12 Revised:2014-10-30 Online:2015-04-23 Published:2015-04-28
Contact: JIN Qing-hui E-mail:jinqh@mail.sim.ac.cn

摘要/Abstract

摘要： 本文使用化学气相沉积（Chemical Vapor Deposition，CVD）石墨烯制作了高灵敏度、低噪声的液栅型石墨烯场效应管（Solution-Gated Graphene Field Effect Transistors，SGFETs），并测试了该器件对磷酸盐缓冲液（Phosphate Buffered Saline，PBS）浓度和pH的响应特性. 随缓冲液浓度的增大，SGFETs转移特性曲线的最小电导点向左偏移，偏移量与溶液浓度的自然对数呈线性关系. 随pH的增大，其最小电导点向右偏移，偏移量与溶液pH呈线性关系. 该响应特性对石墨烯生化传感器排除外界影响因素有一定的指导作用.

关键词: 化学气相沉积石墨烯, 液栅型石墨烯场效应管, 缓冲液浓度和pH

Abstract: High-sensitivity and low-noise solution-gated graphene field effect transistors (SGFETs) were fabricated using chemical vapor deposition (CVD) graphene as a channel material, and their response characteristics to concentration and pH of phosphate buffered saline (PBS) were measured. The minimum conductance point shifted to left with increasing concentration, and the offset showed a linear relationship with the natural logarithm of concentration. While, the minimum conductance point shifted to right with increasing pH, and the offset showed a linear relationship with pH. The research on these response characteristics may give proper guidance to SGFETs’s application.

Key words: chemical vapor deposition graphene, solution-gated graphene field effect transistor, buffer solution concentration and pH

中图分类号:

O647

杜晓薇，成霁，郭慧，金庆辉*，赵建龙. 液栅型石墨烯场效应管的缓冲液浓度和pH响应特性[J]. 电化学（中英文）, 2015, 21(2): 167-171.

DU Xiao-wei, CHENG Ji, GUO Hui, JIN Qing-hui*, ZHAO Jian-long. Response Characteristics of Solution-Gated Graphene Field Effect Transistors to Buffer Solution pH and Concentration[J]. Journal of Electrochemistry, 2015, 21(2): 167-171.

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https://electrochem.xmu.edu.cn/CN/Y2015/V21/I2/167

液栅型石墨烯场效应管的缓冲液浓度和pH响应特性

Response Characteristics of Solution-Gated Graphene Field Effect Transistors to Buffer Solution pH and Concentration

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