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电化学(中英文) ›› 2017, Vol. 23 ›› Issue (6): 667-674.  doi: 10.13208/j.electrochem.170103

• 研究论文 • 上一篇    下一篇

NiS2纳米片的制备及其在非对称超级电容器中的应用

王元有* ,刘亚楠,金党琴   

  1. 扬州工业职业技术学院, 扬州 225127
  • 收稿日期:2017-01-03 修回日期:2017-02-10 出版日期:2017-12-28 发布日期:2017-02-13
  • 通讯作者: 王元有 E-mail:wangyy@ypi.edu.cn
  • 基金资助:

    省级青蓝工程|项目(2016-15)、校级重点课题 (No. 2016xjzk001)、江苏高校品牌建设工程资助项目(No. PPZY2015B180)及2017年江苏省高等学校优秀科技创新团队项目(苏教科[2017]6号)资助

Preparation of NiS2 nanosheet and its application in asymmetric supercapacitor

Wang Yuan-you*, Liu Ya-nan, JIN Dang-qin   

  1. Department of Chemical Engineering, Yangzhou Polytechnic Institute, Yangzhou, 225127
  • Received:2017-01-03 Revised:2017-02-10 Published:2017-12-28 Online:2017-02-13
  • Contact: Wang Yuan-you E-mail:wangyy@ypi.edu.cn

摘要:

本文采用牺牲模板法,以Ni(OH)2作为前驱体制备NiS2. 通过对NiS2进行XRD、EDS、BET、SEM及TEM等表征来研究NiS2的元素组成及结构形貌. SEM及TEM结果显示前驱体及NiS2均为纳米片结构. 电化学测试结果表明NiS2存在着优秀的电容性能,在电流密度为1 A·g-1时,NiS2比电容能够达到1067.3 F·g-1,同时具有高的倍率特性. 为了进一步探究NiS2作为电活性材料的实用性,以NiS2作为阳极材料,活性炭(AC)作为阴极组装成非对称超级电容器,在功率密度为0.8 kW·kg-1,能量密度高达38.4 Wh·kg-1,并且在3000次恒流充放电后,比电容依然保持93.7%.

关键词: 牺牲模板法, NiS2纳米片, 非对称电容器

Abstract: In this work, the NiS2 nanosheets have been synthesized using Ni(OH) as a precursor through a sacrificial template method. The microstructure and chemical composition of as-prepared NiS2 were characterized by XRD, EDS, BET, SEM and TEM techniques. The results showed that both Ni(OH) and NiS were composed of nanoplates. The electrochemical tests revealed that NiS2 exhibited the high specific capacitance of 1067.3 F•g-1 at a current density of 1 A•g-1 and excellent rate performance. Furthermore, in order to evaluate the practical application of NiS2, an asymmetric supercapacitor, NiS2 as the positive electrode and AC as the negative electrode, displayed high energy density of 38.4 Wh•kg-1 with a power density of 0.8 kW•kg-1. Meanwhile, the asymmetric supercapacitor showed a superior cycling performance and 93.7% of the specific capacitance was retained after 3000 charge-discharge cycles.

Key words: sacrificial template method, NiS2, Asymmetric supercapacitor